scholarly journals Ambipolar transport in CVD grown MoSe2 monolayer using an ionic liquid gel gate dielectric

AIP Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 035014 ◽  
Author(s):  
Deliris N. Ortiz ◽  
Idalia Ramos ◽  
Nicholas J. Pinto ◽  
Meng-Qiang Zhao ◽  
Vinayak Kumar ◽  
...  
2017 ◽  
Vol 110 (20) ◽  
pp. 202405 ◽  
Author(s):  
Kenji Ueda ◽  
Shingo Hirose ◽  
Hidefumi Asano

2009 ◽  
Vol 1154 ◽  
Author(s):  
Shimpei Ono ◽  
Kazumoto Miwa ◽  
Shiro Seki ◽  
Jun Takeya

AbstractWe report high-mobility rubrene single-crystal field-effect transistors with ionic-liquid electrolytes used for gate dielectric layers. As the result of fast ionic diffusion to form electric double layers, their capacitances remain more than 1.0 μF/cm2 even at 0.1 MHz. With high carrier mobility of 9.5 cm2/Vs in the rubrene crystal, pronounced current amplification is achieved at the gate voltage of only 0.2 V, which is two orders of magnitude smaller than that necessary for organic thin-film transistors with dielectric gate insulators. The results demonstrate that the ionic-liquid/organic semiconductor interfaces are suited to realize low-power and fast-switching field-effect transistors without sacrificing carrier mobility in forming the solid/liquid interfaces.


2019 ◽  
Vol 12 (10) ◽  
pp. 101004
Author(s):  
Nam-Kwang Cho ◽  
Jinil Cho ◽  
Gayeong Yoo ◽  
Jae-eun Huh ◽  
Suyeon Lee ◽  
...  

2011 ◽  
Vol 12 (12) ◽  
pp. 2076-2083 ◽  
Author(s):  
Yumiko Kaji ◽  
Keiko Ogawa ◽  
Ritsuko Eguchi ◽  
Hidenori Goto ◽  
Yasuyuki Sugawara ◽  
...  

2008 ◽  
Vol 1082 ◽  
Author(s):  
S. Ono ◽  
S. Seki ◽  
R. Hirahara ◽  
Y. Tominari ◽  
J. Takeya

ABSTRACTWe report high-mobility rubrene single-crystal field-effect transistors with ionic-liquid electrolytes used for gate dielectric layers. As the result of fast ionic diffusion to form electric double layers, their capacitances remain more than 10 μF/cm2 even at 0.1 MHz. With high carrier mobility of 1.2 cm2/Vs in the rubrene crystal, pronounced current amplification is achieved at the gate voltage of only 0.2 V, which is two orders of magnitude smaller than that necessary for organic thin-film transistors with dielectric gate insulators. The results demonstrate that the ionic-liquid/organic semiconductor interfaces are suited to realize low-power and fast-switching field-effect transistors without sacrificing carrier mobility in forming the solid/liquid interfaces.


2013 ◽  
Vol 24 (14) ◽  
pp. 2005-2012 ◽  
Author(s):  
Wu Shi ◽  
Jianting Ye ◽  
Joseph G. Checkelsky ◽  
Chieko Terakura ◽  
Yoshihiro Iwasa

2012 ◽  
Vol 86 (7) ◽  
Author(s):  
Kouji Segawa ◽  
Zhi Ren ◽  
Satoshi Sasaki ◽  
Tetsuya Tsuda ◽  
Susumu Kuwabata ◽  
...  

2020 ◽  
Vol 8 (38) ◽  
pp. 13368-13374
Author(s):  
Muhammad Umair Khan ◽  
Gul Hassan ◽  
Jinho Bae

This paper proposes a novel soft ionic liquid (IL) electrically functional device that displays resistive memory characteristics using poly(acrylic acid) partial sodium salt (PAA-Na+:H2O) solution gel and sodium hydroxide (NaOH) in a thin polydimethylsiloxane (PDMS) cylindrical microchannel.


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