scholarly journals Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding

2018 ◽  
Vol 123 (8) ◽  
pp. 085701 ◽  
Author(s):  
A. Jung ◽  
Y. Zhang ◽  
Y. Arroyo Rojas Dasilva ◽  
F. Isa ◽  
H. von Känel
Keyword(s):  
Electrical Properties ◽  
Wafer Bonding ◽  
Room Temperature

SPFM Pre-Cleaning for formation of Silicon Interfaces by Wafer Bonding

1997 ◽  
Vol 477 ◽  
Author(s):  
Stefan Bengtsson ◽  
Karin Ljungberg
Keyword(s):  
Electrical Properties ◽  
Wafer Bonding ◽  
Silicon Surface ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Preparation Procedure ◽  
Cleaning Process ◽  
Spreading Resistance ◽  
Cleaning Procedure

ABSTRACTThe use of H2SO4:H2O2:HF (SPFM) at low HF concentrations (10 to 1000 ppm) has been investigated as the preparation procedure prior to formation of Si/Si interfaces by wafer bonding. The SPFM cleaning process makes it possible to form a hydrophilic (OH terminated) silicon surface, thereby achieving a spontaneous and strong room temperature bond. Electrical characterization using current vs voltage and spreading resistance measurements shows that this cleaning procedure can be used to form Si/Si junctions with excellent electrical properties. Some of the problems related to hydrophobic wafer bonding can thus be circumvented by the proposed technique.

Redox-Inactive CO2 Determines Atmospheric Stability of Electrical Properties of ZnO Nanowire Devices through a Room-Temperature Surface Reaction

2019 ◽  
Vol 11 (43) ◽  
pp. 40260-40266
Author(s):  
Kentaro Nakamura ◽  
Tsunaki Takahashi ◽  
Takuro Hosomi ◽  
Takehito Seki ◽  
Masaki Kanai ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Surface Reaction ◽  
Atmospheric Stability ◽  
Zno Nanowire ◽  
Temperature Surface

Room temperature AC electrical properties of polypyrrole/chromium oxide composite

2020 ◽  
Author(s):  
N. Sasidhar ◽  
T. Chandrashekar ◽  
B. Chethan ◽  
Y. T. Ravikiran ◽  
R. Megha
Keyword(s):  
Electrical Properties ◽  
Chromium Oxide ◽  
Room Temperature ◽  
Oxide Composite ◽  
Ac Electrical Properties

Electrical properties of ZnO-based photodetector prepared by room temperature DC unbalanced magnetron sputtering

2016 ◽  
Author(s):  
Eka Nurfani ◽  
Angga Virdian ◽  
Robi Kurniawan ◽  
Shibghatullah Muhammady ◽  
Inge M. Sutjahja ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron

Structural and electrical properties of KCa2Nb5O15 ceramics

Open Physics ◽  
2008 ◽  
Vol 6 (2) ◽  
Author(s):  
Banarji Behera ◽  
Pratibindhya Nayak ◽  
Ram Choudhary
Keyword(s):  
Electrical Properties ◽  
Temperature Variation ◽  
Electrical Transport ◽  
Room Temperature ◽  
Complex Impedance ◽  
Tungsten Bronze ◽  
Transport Processes ◽  
Relaxation Processes ◽  
Orthorhombic Crystal Structure ◽  
Grain Distribution

AbstractA polycrystalline sample of KCa2Nb5O15 with tungsten bronze structure was prepared by a mixed oxide method at high temperature. A preliminary structural analysis of the compound showed an orthorhombic crystal structure at room temperature. Surface morphology of the compound shows a uniform grain distribution throughout the surface of the sample. Studies of temperature variation on dielectric response at various frequencies show that the compound has a transition temperature well above the room temperature (i.e., 105°C), which was confirmed by the polarization measurement. Electrical properties of the material have been studied using a complex impedance spectroscopy (CIS) technique in a wide temperature (31–500°C) and frequency (102–106 Hz) range that showed only bulk contribution and non-Debye type relaxation processes in the material. The activation energy of the compound (calculated from both the loss and modulus spectrum) is same, and hence the relaxation process may be attributed to the same type of charge carriers. A possible ‘hopping’ mechanism for electrical transport processes in the system is evident from the modulus analysis. A plot of dc conductivity (bulk) with temperature variation demonstrates that the compound exhibits Arrhenius type of electrical conductivity.

Preparation and electrical properties of Bi2Zn2/3Nb4/3O7 thin films deposited at room temperature for embedded capacitor applications

2012 ◽  
Vol 38 ◽  
pp. S73-S77 ◽  
Author(s):  
Xiaohua Zhang ◽  
Wei Ren ◽  
Peng Shi ◽  
M. Saeed Khan ◽  
Xiaofeng Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Room Temperature ◽  
Embedded Capacitor

Room-Temperature Wafer Bonded Multi-Junction Solar Cell Grown by Solid State Molecular Beam Epitaxy

MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2907-2916 ◽  
Author(s):  
Shulong Lu ◽  
Shiro Uchida
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Molecular Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Device Structure ◽  
Junction Solar Cell

ABSTRACTWe studied the InGaP/GaAs//InGaAsP/InGaAs four-junction solar cells grown by molecular beam epitaxy (MBE), which were fabricated by the novel wafer bonding. In order to reach a higher conversion efficiency at highly concentrated illumination, heat generation should be minimized. We have improved the device structure to reduce the thermal and electrical resistances. Especially, the bond resistance was reduced to be the lowest value of 2.5 × 10-5 Ohm cm2 ever reported for a GaAs/InP wafer bond, which was obtained by the specific combination of p+-GaAs/n-InP bonding and by using room-temperature wafer bonding. Furthermore, in order to increase the short circuit current density (Jsc) of 4-junction solar cell, we have developed the quality of InGaAsP material by increasing the growth temperature from 490 °C to 510 °C, which leads to a current matching. In a result, an efficiency of 42 % at 230 suns of the four-junction solar cell fabricated by room-temperature wafer bonding was achieved.

Sign in / Sign up

Export Citation Format

Share Document