scholarly journals Erratum: “Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors” [AIP Advances 7, 035321 (2017)]

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 129902 ◽  
Author(s):  
Jiadong Yu ◽  
Zhibiao Hao ◽  
Linsen Li ◽  
Lai Wang ◽  
Yi Luo ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency

scholarly journals Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors

AIP Advances ◽  
2017 ◽  
Vol 7 (3) ◽  
pp. 035321 ◽  
Author(s):  
Jiadong Yu ◽  
Zhibiao Hao ◽  
Linsen Li ◽  
Lai Wang ◽  
Yi Luo ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency

Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer

2010 ◽  
Vol 8 (2) ◽  
pp. 464-466 ◽  
Author(s):  
Kenichiro Takeda ◽  
Kengo Nagata ◽  
Tomoki Ichikawa ◽  
Kentaro Nonaka ◽  
Yuji Ogiso ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Laser Diodes ◽  
Ultraviolet Laser ◽  
Low Dislocation Density ◽  
Internal Loss

scholarly journals Perspectives on UVC LED: Its Progress and Application

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 196
Author(s):  
Tsung-Chi Hsu ◽  
Yu-Tsai Teng ◽  
Yen-Wei Yeh ◽  
Xiaotong Fan ◽  
Kuo-Hsiung Chu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Flip Chip ◽  
Layer Structure ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Reverse Current ◽  
Light Extraction ◽  
Epitaxial Layers ◽  
High Electron ◽  
Recombination Rates

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

The novel Sr3LiSbO6:Mn4+, Ca2+ far-red-emitting phosphors with over 95% internal quantum efficiency for indoor plant growth LEDs

2021 ◽  
Vol 237 ◽  
pp. 118165
Author(s):  
Linyan Fu ◽  
Yunlong Yang ◽  
Yi Zhang ◽  
Xuefei Ren ◽  
Yingjie Zhu ◽  
...  
Keyword(s):  
Plant Growth ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
The Novel

Perovskite Light‐Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

2021 ◽  
Vol 33 (14) ◽  
pp. 2006302
Author(s):  
Yarong He ◽  
Jiaxu Yan ◽  
Lei Xu ◽  
Bangmin Zhang ◽  
Qian Cheng ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Low Temperatures ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting

scholarly journals Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

2014 ◽  
Vol 50 (11) ◽  
pp. 911-920 ◽  
Author(s):  
Ilya E. Titkov ◽  
Sergey Yu. Karpov ◽  
Amit Yadav ◽  
Vera L. Zerova ◽  
Modestas Zulonas ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Temperature Dependent ◽  
High Brightness ◽  
Light Emitting

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes
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