Assessment by Monte Carlo computer simulations of the phase behavior of hard spherocylinders confined within cylindrical cavities

2017 ◽  
Vol 147 (23) ◽  
pp. 234902 ◽  
Author(s):  
Perla X. Viveros-Méndez ◽  
Alejandro Gil-Villegas ◽  
Said Aranda Espinoza
Keyword(s):  
Monte Carlo ◽  
Phase Behavior ◽  
Computer Simulations ◽  
Cylindrical Cavities ◽  
Hard Spherocylinders

Computer simulations of voting systems

2000 ◽  
Vol 03 (01n04) ◽  
pp. 181-194 ◽  
Author(s):  
Dominique Lepelley ◽  
Ahmed Louichi ◽  
Fabrice Valognes
Keyword(s):  
Monte Carlo ◽  
Computer Simulations ◽  
Monte Carlo Methods ◽  
Scoring Rules ◽  
Voting Systems ◽  
Voting Rules ◽  
Asymptotic Case ◽  
Majority Principle ◽  
Voting Procedures ◽  
Democratic Principles

All voting procedures are susceptible to give rise, if not to paradoxes, at least to violations of some democratic principles. In this paper, we evaluate and compare the propensity of various voting rules -belonging to the class of scoring rules- to satisfy two versions of the majority principle. We consider the asymptotic case where the numbers of voters tends to infinity and, for each rule, we study with the help of Monte Carlo methods how this propensity varies as a function of the number of candidates.

Self-assembly of conformationally flexible molecules under 2D confinement: structural analysis from computer simulations

2018 ◽  
Vol 54 (63) ◽  
pp. 8749-8752 ◽  
Author(s):  
Damian Nieckarz ◽  
Paweł Szabelski
Keyword(s):  
Monte Carlo ◽  
Structural Analysis ◽  
Monte Carlo Simulations ◽  
Computer Simulations ◽  
Self Assembly ◽  
Flexible Molecules

Monte Carlo simulations reveal the role of surface conformers in self-assembly on crystalline supports.

Growth of Thin Nickel Silicide Layers on Clean B-Doped Si(111) Surfaces at Room Temperature

1989 ◽  
Vol 160 ◽  
Author(s):  
L. Luo ◽  
G. A. Smith ◽  
W. M. Gibson
Keyword(s):  
Monte Carlo ◽  
Computer Simulations ◽  
Room Temperature ◽  
High Energy ◽  
Nickel Silicide ◽  
Growth Stages ◽  
Initial Growth ◽  
Fourth Layer ◽  
Ion Channeling ◽  
Thin Nickel

AbstractThe initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ~ 3 ML) leads to the growth of NiSi2 which is thought to be a diffusion barrier that terminates further formation of NiSi2 at room temperature.

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