Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor

2017 ◽  
Vol 111 (25) ◽  
pp. 252401 ◽  
Author(s):  
Sangyeop Lee ◽  
Seonghoon Choi ◽  
Seul-Ki Bac ◽  
Kyung Jae Lee ◽  
Jihoon Chang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Ferromagnetic Semiconductor ◽  
Effective Magnetic Field ◽  
Spin Orbit

Spin–Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor

2019 ◽  
Vol 55 (2) ◽  
pp. 1-6
Author(s):  
Sanghoon Lee ◽  
Sangyeop Lee ◽  
Seul-Ki Bac ◽  
Seonghoon Choi ◽  
Xinyu Liu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Ferromagnetic Semiconductor ◽  
Effective Magnetic Field ◽  
Spin Orbit

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

Two-dimensional imaging of the spin-orbit effective magnetic field

2008 ◽  
Vol 77 (3) ◽  
Author(s):  
L. Meier ◽  
G. Salis ◽  
E. Gini ◽  
I. Shorubalko ◽  
K. Ensslin
Keyword(s):  
Magnetic Field ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Two Dimensional

scholarly journals Quantitative determination of spin–orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Seongjoon Park ◽  
Shinwoo Lee ◽  
Kyung Jae Lee ◽  
SeongJin Park ◽  
Phunvira Chongthanaphisut ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Anisotropy ◽  
Current Density ◽  
Hall Resistance ◽  
Spin Orbit ◽  
Induced Magnetic Field ◽  
Planar Hall Effect ◽  
Hall Effect Measurements ◽  
The Difference

AbstractSpin–orbit-induced (SOI) effective magnetic field in GaMnAs film with in-plane magnetic anisotropy has been investigated by planar Hall effect measurements. The presence of SOI field was identified by a shift between planar Hall resistance (PHR) hystereses observed with positive and negative currents. The difference of switching fields occurring between the two current polarities, which is determined by the strength of the SOI field, is shown to depend on the external field direction. In this paper we have developed a method for obtaining the magnitude of the SOI fields based on magnetic free energy that includes the effects of magnetic anisotropy and the SOI field. Using this approach, the SOI field for a given current density was accurately obtained by fitting to the observed dependence of the switching fields on the applied field directions. Values of the SOI field obtained with field scan PHR measurements give results that are consistent with those obtained by analyzing the angular dependence of PHR, indicating the reliability of the field scan PHR method for quantifying the SOI-field in GaMnAs films. The magnitude of the SOI field systematically increases with increasing current density, demonstrating the usefulness of SOI fields for manipulation of magnetization by current in GaMnAs films.

scholarly journals Quantitative Determination of Spin-Orbit-Induced Magnetic Field in GaMnAs by Field-Scan Planar Hall Measurements

2020 ◽  
Author(s):  
Seongjoon Park ◽  
Shinwoo Lee ◽  
Kyung Jae Lee ◽  
SeongJin park ◽  
Phunvira Chongthanaphisut ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Anisotropy ◽  
Current Density ◽  
Hall Resistance ◽  
Spin Orbit ◽  
Induced Magnetic Field ◽  
Planar Hall Effect ◽  
Hall Effect Measurements ◽  
The Difference

Abstract Spin-orbit-induced (SOI) effective magnetic field in GaMnAs film with in-plane magnetic anisotropy has been investigated by planar Hall effect measurements. The presence of SOI field was identified by a shift between planar Hall resistance (PHR) hystereses observed with positive and negative currents. The difference of switching fields occurring between the two current polarities, which is determined by the strength of the SOI field, is shown to depend on the external field direction. In this paper we have developed a method for obtaining the magnitude of the SOI fields based on magnetic free energy that includes the effects of magnetic anisotropy and the SOI field. Using this approach, the SOI field for a given current density was accurately obtained by fitting to the observed dependence of the switching fields on the applied field directions. Values of the SOI field obtained with field scan PHR measurements give results that are consistent with those obtained by analyzing the angular dependence of PHR, indicating the reliability of the field scan PHR method for quantifying the SOI-field in GaMnAs films. The magnitude of the SOI field systematically increases with increasing current density, demonstrating the usefulness of SOI fields for manipulation of magnetization by current in GaMnAs films.

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