scholarly journals Atomic-scale identification of novel planar defect phases in heteroepitaxial YBa2Cu3O7−δ thin films

AIP Advances ◽  
2018 ◽  
Vol 8 (5) ◽  
pp. 055022 ◽  
Author(s):  
Nicolas Gauquelin ◽  
Hao Zhang ◽  
Guozhen Zhu ◽  
John Y. T. Wei ◽  
Gianluigi A. Botton
Keyword(s):  
Thin Films ◽  
Atomic Scale ◽  
Planar Defect

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

Atomic scale investigation of planar defects in 0.95Na0.5Bi0.5TiO3–0.05BaTiO3 thin films on SrTiO3 (001) substrates

2016 ◽  
Vol 676 ◽  
pp. 173-180 ◽  
Author(s):  
Xiao-Wei Jin ◽  
Lu Lu ◽  
Shao-Bo Mi ◽  
Sheng Cheng ◽  
Ming Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Scale ◽  
Planar Defects

scholarly journals Epitaxial Growth and Atomic-Scale Investigation of Dielectric Ca1.46Nb1.11Ti1.38O7 Thin Films

2017 ◽  
Vol 23 (S1) ◽  
pp. 1658-1659
Author(s):  
Xiao-Wei Jin ◽  
Yue-Hua Chen ◽  
Lu Lu ◽  
Shao-Bo Mi ◽  
Hong Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Atomic Scale

scholarly journals Atomic scale microstructures of high-k HfSiO thin films fabricated by magnetron sputtering

2012 ◽  
Vol 177 (10) ◽  
pp. 717-720 ◽  
Author(s):  
Etienne Talbot ◽  
Manuel Roussel ◽  
Larysa Khomenkova ◽  
Fabrice Gourbilleau ◽  
Philippe Pareige
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Atomic Scale ◽  
High K

Nano-indentation and nano-scratching of pure nickel and NiTi shape memory alloy thin films: an atomic-scale simulation

2021 ◽  
Vol 736 ◽  
pp. 138906
Author(s):  
Zenglu Song ◽  
Xiao Tang ◽  
Xiang Chen ◽  
Tao Fu ◽  
Huanping Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Shape Memory Alloy ◽  
Shape Memory ◽  
Pure Nickel ◽  
Atomic Scale ◽  
Niti Shape Memory Alloy ◽  
Nano Indentation

Atomic scale characterization of point and extended defects in niobate thin films

2019 ◽  
Vol 203 ◽  
pp. 82-87 ◽  
Author(s):  
Changjian Li ◽  
Dongsheng Song ◽  
Mengsha Li ◽  
Chunhua Tang ◽  
Deqing Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Scale ◽  
Extended Defects ◽  
Scale Characterization

scholarly journals Atomic‐Scale Interface Structure in Domain Matching Epitaxial BaBiO 3 Thin Films Grown on SrTiO 3 Substrates

2020 ◽  
Vol 14 (6) ◽  
pp. 2000054
Author(s):  
Lei Jin ◽  
Michael Zapf ◽  
Martin Stübinger ◽  
Martin Kamp ◽  
Michael Sing ◽  
...  
Keyword(s):  
Thin Films ◽  
Interface Structure ◽  
Atomic Scale

The Role of SiH3 Diffusion in Determining the Surface Smoothness of Plasma-Deposited Amorphous Si Thin Films: An Atomic-Scale Analysis

2005 ◽  
Vol 862 ◽  
Author(s):  
Mayur S. Valipa ◽  
Tamas Bakos ◽  
Eray S. Aydil ◽  
Dimitrios Maroudas
Keyword(s):  
Thin Films ◽  
Density Functional ◽  
Activation Barrier ◽  
Density Functional Theory Calculations ◽  
Atomic Scale ◽  
Functional Theory ◽  
Weak Adsorption ◽  
Dynamics Simulations ◽  
Hydrogenated Amorphous

AbstractDevice-quality hydrogenated amorphous silicon (a-Si:H) thin films grown under conditions where the SiH3 radical is the dominant deposition precursor are remarkably smooth, as the SiH3 radical is very mobile and fills surface valleys during its diffusion on the a-Si:H surface. In this paper, we analyze atomic-scale mechanisms of SiH3 diffusion on a-Si:H surfaces based on molecular-dynamics simulations of SiH3 radical impingement on surfaces of a-Si:H films. The computed average activation barrier for radical diffusion on a-Si:H is 0.16 eV. This low barrier is due to the weak adsorption of the radical onto the a-Si:H surface and its migration predominantly through overcoordination defects; this is consistent with our density functional theory calculations on crystalline Si surfaces. The diffusing SiH3 radical incorporates preferentially into valleys on the a-Si:H surface when it transfers an H atom and forms a Si-Si backbond, even in the absence of dangling bonds.

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