Measurement of contact angles at room temperature in high magnetic field

2017 ◽  
Vol 88 (11) ◽  
pp. 115110 ◽  
Author(s):  
Chuanjun Li ◽  
Yang Cao ◽  
Rui Guo ◽  
Shengya He ◽  
Weidong Xuan ◽  
...  
2015 ◽  
Vol 119 (3) ◽  
pp. 917-921
Author(s):  
Qian Xie ◽  
Weipeng Wang ◽  
Zheng Xie ◽  
Shuai Ning ◽  
Zhengcao Li ◽  
...  

1997 ◽  
Vol 07 (C5) ◽  
pp. C5-377-C5-382
Author(s):  
S. Kajiwara ◽  
T. Kikuchi ◽  
H. Pal ◽  
T. Asano ◽  
M. Kosuge ◽  
...  

2000 ◽  
Vol 639 ◽  
Author(s):  
W. Knap ◽  
E. Borovitskaya ◽  
M. S. Shur ◽  
R. Gaska ◽  
G. Karczewski ◽  
...  

ABSTRACTWe present the results of the high magnetic field studies of properties of two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures grown over high-pressure bulk GaN, sapphire, and insulating SiC substrates. The experimental results include the low field Hall measurements, cyclotron resonance measurements, and cryogenic temperature Quantum Hall Effect studies as well as room-temperature characteristics of High Electron Mobility Transistors fabricated on all these substrates. The room temperature high field measurements allow us to clearly separate the contributions of a parasitic parallel conduction from 2DEG conduction in all investigated heterostructures.The magnetotransport measurements are performed in the magnetic fields up to 30 Tesla for temperatures between 50mK-300K. This high magnetic field in combination with very high mobilities (over 60.000 cm2/Vs) in the sample on the bulk GaN substrates allow us to observe features related both to cyclotron resonance and spin splitting. The temperature dependence of this splitting determines the spin and cyclotron resonance energy gaps and, in combination with cyclotron resonance and tilted field experiments, allows us to determine the complete energy structure of 2DEG conduction band. We also present the first experimental results showing so called “the exchange enhancement” of the energy gaps between spin Landau levels.


2011 ◽  
Vol 421 ◽  
pp. 792-795
Author(s):  
Tie Liu ◽  
Yin Liu ◽  
Qiang Wang ◽  
Yan Wang ◽  
Kai Wang ◽  
...  

To investigate the effect of high magnetic fields on the solidification behavior of binary eutectic system, solidification and quenching experiments of Al-11.8 wt.%Si and Ag-10 wt.%Cu alloys were carried out with and without an 8.8 T high magnetic field. It was found that the application of the high magnetic field could increase the concentration of Si in the primary Al and Cu in the primary Ag at their eutectic temperatures, but could not obviously affect the Si concentration in the primary Al at room temperature. The above increase can be attributed to the weakness of the solute diffusion at the liquid-solid interface during solidification caused by the high magnetic field.


2000 ◽  
Vol 10 (PR5) ◽  
pp. Pr5-311-Pr5-314
Author(s):  
M. A. Liberman

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