Fabrication of high-performance InGaZnOx thin film transistors based on control of oxidation using a low-temperature plasma

Kosuke Takenaka; Masashi Endo; Giichiro Uchida; Yuichi Setsuhara

doi:10.1063/1.5011268

Fabrication of high-performance InGaZnOx thin film transistors based on control of oxidation using a low-temperature plasma

Applied Physics Letters ◽

10.1063/1.5011268 ◽

2018 ◽

Vol 112 (15) ◽

pp. 152103 ◽

Cited By ~ 8

Author(s):

Kosuke Takenaka ◽

Masashi Endo ◽

Giichiro Uchida ◽

Yuichi Setsuhara

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

High Performance ◽

Low Temperature Plasma ◽

Temperature Plasma

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Low-temperature plasma-deposited microcrystalline silicon thin films: an emerging material for stable thin film transistors

10.1117/12.476827 ◽

2003 ◽

Author(s):

Pere Roca i Cabarrocas ◽

Samir Kasouit ◽

B. Kalache ◽

Regis Vanderhaghen ◽

Y. Bonnassieux ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Low Temperature ◽

Thin Film Transistors ◽

Low Temperature Plasma ◽

Microcrystalline Silicon ◽

Temperature Plasma ◽

Silicon Thin Films

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Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2017.2719946 ◽

2017 ◽

Vol 16 (5) ◽

pp. 876-879 ◽

Cited By ~ 8

Author(s):

Po-Chun Chen ◽

Yu-Chien Chiu ◽

Zhi-Wei Zheng ◽

Ming-Huei Lin ◽

Chun-Hu Cheng ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Tin Oxide ◽

Thin Film Transistors ◽

Low Temperature Plasma ◽

Plasma Process ◽

Temperature Plasma

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Low-temperature high-performance In-Ga-Sn-O thin-film transistors with Al2O3 grown by a facile dual-atomic layer deposition

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2021.160053 ◽

2021 ◽

pp. 160053

Author(s):

Hyunjae Jang ◽

Changyong Oh ◽

Tae Hyun Kim ◽

Hyeong Wook Kim ◽

Sang Ik Lee ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

High Performance ◽

Atomic Layer ◽

Layer Deposition

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Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing

ACS Applied Materials & Interfaces ◽

10.1021/acsami.1c05565 ◽

2021 ◽

Author(s):

Min Seong Kim ◽

Hyung Tae Kim ◽

Hyukjoon Yoo ◽

Dong Hyun Choi ◽

Jeong Woo Park ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Oxygen Scavenger ◽

Low Temperature Processing

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High-performance dual-layer channel indium gallium zinc oxide thin-film transistors fabricated in different oxygen contents at low temperature

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ef07 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EF07 ◽

Cited By ~ 15

Author(s):

Yu Tian ◽

Dedong Han ◽

Suoming Zhang ◽

Fuqing Huang ◽

Dongfang Shan ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Hybridization of a low-temperature processable polyimide gate insulator for high performance pentacene thin-film transistors

Organic Electronics ◽

10.1016/j.orgel.2008.05.003 ◽

2008 ◽

Vol 9 (5) ◽

pp. 711-720 ◽

Cited By ~ 30

Author(s):

Taek Ahn ◽

Jin Woo Kim ◽

Yoojeong Choi ◽

Mi Hye Yi

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

High Performance ◽

Gate Insulator

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Low-temperature solution-processed high-k ZrTiOx dielectric films for high-performance organic thin film transistors

Synthetic Metals ◽

10.1016/j.synthmet.2015.10.011 ◽

2015 ◽

Vol 210 ◽

pp. 282-287 ◽

Cited By ~ 9

Author(s):

Qian Zhang ◽

Guodong Xia ◽

Wenwen Xia ◽

Ji Zhou ◽

Sumei Wang

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

High Performance ◽

Organic Thin Film Transistors ◽

Dielectric Films ◽

Organic Thin Film ◽

Solution Processed ◽

High K ◽

Temperature Solution

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Design of High-Performance Rram through Interfacial Engineering Toward Neuromorphic Application by Low-Temperature Plasma Selenization Process

ECS Meeting Abstracts ◽

10.1149/ma2021-0233976mtgabs ◽

2021 ◽

Vol MA2021-02 (33) ◽

pp. 976-976

Author(s):

Mayur Chaudhary ◽

Yu-Chuan Shih ◽

Shin-Yi Tang ◽

Yen-kai Chen ◽

Yu-Lun Chueh

Keyword(s):

Low Temperature ◽

High Performance ◽

Low Temperature Plasma ◽

Temperature Plasma ◽

Interfacial Engineering ◽

Selenization Process

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The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2019.06.064 ◽

2019 ◽

Vol 378 ◽

pp. 124744

Author(s):

M.G. Ambartsumov ◽

V.A. Tarala ◽

S.O. Krandievsky ◽

A.A. Kravtsov ◽

A.B. Sautiev ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Aluminum Nitride ◽

Atomic Layer ◽

Deposition Process ◽

Low Temperature Plasma ◽

Temperature Plasma ◽

Layer Deposition ◽

Film Microstructure

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Highly efficient UV-Ozone treatment for IAZO active layer to facilitate the low temperature fabrication of high performance thin film transistors

Ceramics International ◽

10.1016/j.ceramint.2020.04.016 ◽

2020 ◽

Vol 46 (11) ◽

pp. 17295-17299 ◽

Cited By ~ 1

Author(s):

Weidong Xu ◽

Jianfeng Jiang ◽

Lin Han ◽

Xianjin Feng

Keyword(s):

Thin Film ◽

Low Temperature ◽

Active Layer ◽

Thin Film Transistors ◽

High Performance ◽

Ozone Treatment ◽

Highly Efficient ◽

Uv Ozone

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