Operating silicon-based lasers with high quantum efficiency above room temperature

Scilight ◽  
2017 ◽  
Vol 2017 (17) ◽  
pp. 170003
Author(s):  
Louisa Cockbill
Keyword(s):  
Quantum Efficiency ◽  
Room Temperature ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Silicon Based

Room Temperature InAsxP1-x-ySby/InAs Photodetectors with High Quantum Efficiency

1997 ◽  
Vol 36 (Part 1, No. 5A) ◽  
pp. 2614-2616 ◽  
Author(s):  
XiuYing Gong ◽  
Tomuo Yamaguchi ◽  
Hirofumi Kan ◽  
Takamitsu Makino ◽  
Takefumi Iida ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Room Temperature ◽  
High Quantum Efficiency ◽  
High Quantum

scholarly journals High Quantum Efficiency and Broadband Photodetector Based on Graphene/Silicon Nanometer Truncated Cone Arrays

Sensors ◽  
2021 ◽  
Vol 21 (18) ◽  
pp. 6146
Author(s):  
Jijie Zhao ◽  
Huan Liu ◽  
Lier Deng ◽  
Minyu Bai ◽  
Fei Xie ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Performance ◽  
Light Trapping ◽  
Surface Recombination ◽  
Response Speed ◽  
Transparent Electrode ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Truncated Cone ◽  
Silicon Based

Light loss is one of the main factors affecting the quantum efficiency of photodetectors. Many researchers have attempted to use various methods to improve the quantum efficiency of silicon-based photodetectors. Herein, we designed highly anti-reflective silicon nanometer truncated cone arrays (Si NTCAs) as a light-trapping layer in combination with graphene to construct a high-performance graphene/Si NTCAs photodetector. This heterojunction structure overcomes the weak light absorption and severe surface recombination in traditional silicon-based photodetectors. At the same time, graphene can be used both as a broad-spectrum absorption layer and as a transparent electrode to improve the response speed of heterojunction devices. Due to these two mechanisms, this photodetector had a high quantum efficiency of 97% at a wavelength of 780 nm and a short rise/fall time of 60/105µs. This device design promotes the development of silicon-based photodetectors and provides new possibilities for integrated photoelectric systems.

Multivariant ligands stabilize anionic solvent-oriented α-CsPbX3 nanocrystals at room temperature

Nanoscale ◽  
2021 ◽  
Author(s):  
Yanqing Luo ◽  
Tao Tan ◽  
Sen Wang ◽  
Ran Pang ◽  
Lihong Jiang ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Self Assembly ◽  
Room Temperature ◽  
Cubic Phase ◽  
Ambient Conditions ◽  
High Quantum Efficiency ◽  
Long Term Stability ◽  
High Quantum ◽  
Assembly Method

A self-assembly method is proposed for cubic phase CsPbX3 nanocrystals under ambient conditions. Long-term stability and high quantum efficiency are maintained via ligand evolution from paired X type ligands to hybrid L–X type ligands.

High Output Power (>20 W) and High Quantum Efficiency in a Photopumped ZnSe/ZnSSe Blue Laser Operating at Room Temperature

1991 ◽  
Vol 30 (Part 2, No. 8A) ◽  
pp. L1399-L1401 ◽  
Author(s):  
Koichiro Nakanishi ◽  
Ikuo Suemune ◽  
Yoshihisa Fujii ◽  
Yasuhide Kuroda ◽  
Masamichi Yamanishi
Keyword(s):  
Output Power ◽  
Quantum Efficiency ◽  
Room Temperature ◽  
Blue Laser ◽  
High Output Power ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
High Output

Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing

Nano Letters ◽  
2014 ◽  
Vol 14 (9) ◽  
pp. 5206-5211 ◽  
Author(s):  
Qian Gao ◽  
Dhruv Saxena ◽  
Fan Wang ◽  
Lan Fu ◽  
Sudha Mokkapati ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Room Temperature ◽  
Selective Area Epitaxy ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Selective Area

Modulation of optical properties of ZnS QDs embedded glasses through aluminum and manganese doping

2021 ◽  
Author(s):  
Kai Li ◽  
Ying Ye ◽  
Wenchao Zhang ◽  
Yuzhou Hu ◽  
Ying Yang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Efficiency ◽  
High Quantum Efficiency ◽  
Information Display ◽  
Manganese Doping ◽  
High Quantum

Nontoxic cadmium-free ZnS and ZnSe QDs QDs with high quantum efficiency have drawn considerable attention for information display. Applications of ZnS and ZnSe QDs are limited by their short emission...

scholarly journals Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 428
Author(s):  
Reza Masoudian Saadabad ◽  
Christian Pauly ◽  
Norbert Herschbach ◽  
Dragomir N. Neshev ◽  
Haroldo T. Hattori ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Speed ◽  
Near Infrared ◽  
Infrared Detector ◽  
High Quantum Efficiency ◽  
Fast Detection ◽  
High Quantum ◽  
Resonant Modes ◽  
Infrared Wavelengths ◽  
Dielectric Metasurface

Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel, a high-speed photodetector with a bandwidth of 65 GHz has been achieved. At the same time, high quantum efficiency for near-infrared illumination can be obtained by the engineering of optical resonant modes to localize optical energy inside the intrinsic Ge disks. Furthermore, small junction capacitance and the possibility of zero/low bias operation have been shown. Our results show that all-dielectric metasurfaces can improve the performance of photodetectors.

A novel high quantum efficiency SiGe Phototransistor detector

2021 ◽  
Author(s):  
Yang Xiang ◽  
Hongyun Xie ◽  
Yin Sha ◽  
Ruilang Ji ◽  
Fu Zhu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Quantum Efficiency ◽  
High Quantum
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