scholarly journals Influences of top electrode reduction potential and operation ambient on the switching characteristics of tantalum oxide resistive switching memories

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125313
Author(s):  
Tse-Ming Ding ◽  
Yi-Ju Chen ◽  
Jiann-Shing Jeng ◽  
Jen-Sue Chen
2016 ◽  
Vol 159 ◽  
pp. 190-197 ◽  
Author(s):  
Mi Ra Park ◽  
Yawar Abbas ◽  
Haider Abbas ◽  
Quanli Hu ◽  
Tae Sung Lee ◽  
...  

2016 ◽  
Vol 160 ◽  
pp. 49-53 ◽  
Author(s):  
Quanli Hu ◽  
Yawar Abbas ◽  
Haider Abbas ◽  
Mi Ra Park ◽  
Tae-Sik Yoon ◽  
...  

ACS Nano ◽  
2014 ◽  
Vol 8 (10) ◽  
pp. 10262-10269 ◽  
Author(s):  
Sungho Kim ◽  
ShinHyun Choi ◽  
Jihang Lee ◽  
Wei D. Lu

2017 ◽  
Vol 17 (10) ◽  
pp. 7150-7154 ◽  
Author(s):  
Haider Abbas ◽  
Yawar Abbas ◽  
Mi Ra Park ◽  
Quanli Hu ◽  
Tae Sung Lee ◽  
...  

2018 ◽  
Vol 190 ◽  
pp. 7-10 ◽  
Author(s):  
Quanli Hu ◽  
Mi Ra Park ◽  
Haider Abbas ◽  
Tae Su Kang ◽  
Tae-Sik Yoon ◽  
...  

2016 ◽  
Vol 16 (10) ◽  
pp. 10231-10236 ◽  
Author(s):  
Yawar Abbas ◽  
Mi Ra Park ◽  
Quanli Hu ◽  
Tae Sung Lee ◽  
Haider Abbas ◽  
...  

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI

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