Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis

2017 ◽  
Vol 111 (13) ◽  
pp. 132407 ◽  
Author(s):  
J. Igarashi ◽  
J. Llandro ◽  
H. Sato ◽  
F. Matsukura ◽  
H. Ohno
Keyword(s):  
Magnetic Field ◽  
Easy Axis ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Angle Dependence

Detection of Sub-Nano-Tesla Magnetic Field by Integrated Magnetic Tunnel Junctions with Bottom Synthetic Antiferro-Coupled Free Layer

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CM07 ◽  
Author(s):  
Kosuke Fujiwara ◽  
Mikihiko Oogane ◽  
Takuo Nishikawa ◽  
Hiroshi Naganuma ◽  
Yasuo Ando
Keyword(s):  
Magnetic Field ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

Fabrication of Magnetic Tunnel Junctions with Amorphous CoFeSiB Ferromagnetic Electrode for Magnetic Field Sensor Devices

2013 ◽  
Vol 6 (10) ◽  
pp. 103004 ◽  
Author(s):  
Daiki Kato ◽  
Mikihiko Oogane ◽  
Kosuke Fujiwara ◽  
Takuo Nishikawa ◽  
Hiroshi Naganuma ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Field Sensor ◽  
Ferromagnetic Electrode ◽  
Sensor Devices ◽  
Field Sensor

Fabrication of Magnetic Tunnel Junctions with a Synthetic Ferrimagnetic Free Layer for Magnetic Field Sensor Applications

2011 ◽  
Vol 50 (1R) ◽  
pp. 013001 ◽  
Author(s):  
Kousuke Fujiwara ◽  
Mikihiko Oogane ◽  
Futoyoshi Kou ◽  
Daisuke Watanabe ◽  
Hiroshi Naganuma ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Field Sensor ◽  
Free Layer ◽  
Sensor Applications ◽  
Field Sensor

Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

2012 ◽  
Vol 111 (7) ◽  
pp. 07C710 ◽  
Author(s):  
Kosuke Fujiwara ◽  
Mikihiko Oogane ◽  
Saeko Yokota ◽  
Takuo Nishikawa ◽  
Hiroshi Naganuma ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Field Sensor ◽  
Sensor Devices ◽  
Field Sensor

MgO Based Magnetic Tunnel Junctions With Co$_{20}$Fe$_{60}$B$_{20}$ Sensing Layer for Magnetic Field Sensors

2013 ◽  
Vol 49 (7) ◽  
pp. 3878-3881 ◽  
Author(s):  
T. Takenaga ◽  
C. Yoshida ◽  
Y. Yamazaki ◽  
A. Hatada ◽  
M. Nakabayashi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Field Sensors

scholarly journals Full voltage manipulation of the resistance of a magnetic tunnel junction

2019 ◽  
Vol 5 (12) ◽  
pp. eaay5141 ◽  
Author(s):  
Aitian Chen ◽  
Yuelei Zhao ◽  
Yan Wen ◽  
Long Pan ◽  
Peisen Li ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Energy Efficient ◽  
Room Temperature ◽  
Efficient Solution ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Spintronic Devices ◽  
Electrical Control

One of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage. This voltage-generated localized strain has the ability to modify the magnetic anisotropy of the free layer effectively. By sequentially applying voltages to these two pairs of electrodes, we successively and unidirectionally rotate the magnetization of the free layer in the magnetic tunnel junctions to complete reversible 180° magnetization switching. Thus, we accomplish a giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field. Our results are important for exploring voltage control of magnetism and low-power spintronic devices.

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