Crystallographic properties and electronic structure of V-doped AlN films that absorb near ultraviolet-visible-infrared light

2018 ◽  
Vol 123 (16) ◽  
pp. 161546 ◽  
Author(s):  
N. Tatemizo ◽  
S. Imada ◽  
Y. Miura ◽  
K. Nishio ◽  
T. Isshiki
Keyword(s):  
Electronic Structure ◽  
Infrared Light ◽  
Near Ultraviolet

scholarly journals The near ultraviolet photodissociation dynamics of 2- and 3-substituted thiophenols: Geometric vs. electronic structure effects

2017 ◽  
Vol 147 (1) ◽  
pp. 013923 ◽  
Author(s):  
Barbara Marchetti ◽  
Tolga N. V. Karsili ◽  
Maicol Cipriani ◽  
Christopher S. Hansen ◽  
Michael N. R. Ashfold
Keyword(s):  
Electronic Structure ◽  
Ultraviolet Photodissociation ◽  
Near Ultraviolet

scholarly journals First Principles Study on the Electronic Structure and Optical Properties of La Doped YB6 Crystals

2021 ◽  
pp. X
Author(s):  
Hongbo TANG ◽  
Qiuyue LI ◽  
Jian ZHOU ◽  
Lihua XIAO ◽  
Ping PENG
Keyword(s):  
Density Functional Theory ◽  
Optical Properties ◽  
Electronic Structure ◽  
First Principles ◽  
Density Functional ◽  
Near Infrared ◽  
Infrared Light ◽  
First Principles Calculations ◽  
Functional Theory ◽  
La Doped

Received 03 January 2020; accepted 17 June 2020 We have investigated the optical properties of La (0, 0.125, 0.250) doped YB6 by means of first-principles calculations within the framework of density functional theory. It was found that electronic and optical properties of YB6 crystals varied remarkably when Y atoms were replaced with La atoms. Furthermore, with increasing content of La in YB6 crystals from 12.5 % to 25 % reflectivity and absorption coefficient of near infrared light decreased obviously, while the transmittance was enhanced.

Electronic Structure and Infrared Light Emission in Dislocation-Engineered Silicon

2015 ◽  
Vol 14 (3) ◽  
pp. 399-403 ◽  
Author(s):  
Cheng-Lun Hsin ◽  
Hsu-Shen Teng ◽  
Hsiang-Yuan Lin ◽  
Tzu-Hsuan Cheng ◽  
Chao-Chia Cheng ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Light Emission ◽  
Infrared Light

scholarly journals Strain-Modulated Electronic Structure and Infrared Light Adsorption in Palladium Diselenide Monolayer

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Xiaobiao Liu ◽  
Hongcai Zhou ◽  
Bo Yang ◽  
Yuanyuan Qu ◽  
Mingwen Zhao
Keyword(s):  
Electronic Structure ◽  
Infrared Light

scholarly journals Improved efficiency of dye-sensitized solar cells by doping of strontium aluminate phosphor in TiO2 photoelectrode

2015 ◽  
Vol 33 (2) ◽  
pp. 237-241
Author(s):  
Seung Hwangbo ◽  
Jin-Tae Kim ◽  
Kyu-Seog Hwang
Keyword(s):  
Near Infrared ◽  
Spray Deposition ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Infrared Light ◽  
Electrostatic Spray Deposition ◽  
Dye Sensitized ◽  
Near Ultraviolet

AbstractSrAl2O4:Eu2+, Dy3+ phosphor was synthesized by chemical solution route to use as a dopant in TiO2 layer employed as a photoelectrode for down conversion of ultraviolet and near-ultraviolet to visible and near-infrared light in a dye-sensitized solar cell. Nano-crystalline structure of the SrAl2O4:Eu2+, Dy3+ powder was confirmed by X-ray diffraction analysis and field emission scanning electron microscopy. Monitored at 520 nm, SrAl2O4:Eu2+, Dy3+ phosphor showed emission peaks at 460 to 610 nm due to 4f6 4f7 transitions of Eu2+ ions. For the study, SrAl2O4:Eu2+, Dy3+ phosphor-doped TiO2 layer was deposited on fluorine-doped tin oxide coated glass by electrostatic spray deposition. The short circuit current, open circuit voltage, fill factor, and conversion efficiency of the cells were measured. Experimental results revealed that the device efficiency for the SrAl2O4:Eu2+, Dy3+ phosphor-doped TiO2 layer increased to 7.20 %, whereas that of the pure-TiO2 photoelectrode was 4.13 %.

scholarly journals Silicon Photomultipliers: Technology Optimizations for Ultraviolet, Visible and Near-Infrared Range

Instruments ◽  
2019 ◽  
Vol 3 (1) ◽  
pp. 15 ◽  
Author(s):  
Fabio Acerbi ◽  
Giovanni Paternoster ◽  
Massimo Capasso ◽  
Marco Marcante ◽  
Alberto Mazzi ◽  
...  
Keyword(s):  
Near Infrared ◽  
Detection Efficiency ◽  
Single Photon ◽  
High Energy ◽  
Infrared Light ◽  
Infrared Range ◽  
Silicon Photomultipliers ◽  
Deep Trench ◽  
Near Ultraviolet ◽  
Physics Experiments

Silicon photomultipliers (SiPMs) are single-photon sensitive solid-state detectors that are becoming popular for several applications, thanks to massive performance improvements over the last years. Starting as a replacement for the photomultiplier tube (PMT), they are now used in medical applications, big high-energy physics experiments, nuclear physics experiments, spectroscopy, biology and light detection and ranging (LIDAR) applications. Due to different requirements in terms of detection efficiency, noise, etc., several optimizations have been introduced by the manufacturers; for example, spectral sensitivity has been optimized for visible light, near ultraviolet, vacuum ultraviolet, and near infrared light. Each one of them require specific processes and structural optimization. We present in this paper recent improvements in SiPM performance, owing to a higher cell fill-factor, lower noise, improved silicon materials, and deep trench isolation. We describe issues related to the characterization of analog SiPM, particularly due to the different sources of correlated noise, which have to be distinguished from each other and from the primary pulses. We also describe particular analyses and optimizations conducted for specific applications like the readout of liquid noble gas scintillators, requiring these detectors to operate at cryogenic temperatures.

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

1996 ◽  
Vol 54 ◽  
pp. 160-161
Author(s):  
J. Fink
Keyword(s):  
Electronic Structure ◽  
Conducting Polymers ◽  
Conjugated Polymers ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Light Emitting ◽  
One Dimensional ◽  
New Class ◽  
Electrical Conductivities ◽  
Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

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