In-plane electrical conduction mechanisms of highly dense carbon nanotube forests on silicon carbide

2018 ◽  
Vol 123 (4) ◽  
pp. 045104 ◽  
Author(s):  
Keita Matsuda ◽  
Wataru Norimatsu ◽  
Jianfeng Bao ◽  
Hiroshi Kawarada ◽  
Michiko Kusunoki
Keyword(s):  
Silicon Carbide ◽  
Carbon Nanotube ◽  
Electrical Conduction ◽  
Conduction Mechanisms ◽  
Electrical Conduction Mechanisms ◽  
Carbon Nanotube Forests

Electrical conduction of carbon nanotube forests through sub-nanometric films of alumina

2013 ◽  
Vol 102 (11) ◽  
pp. 113109 ◽  
Author(s):  
Santiago Esconjauregui ◽  
Rongsi Xie ◽  
Yuzheng Guo ◽  
Sieglinde M.-L. Pfaendler ◽  
Martin Fouquet ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electrical Conduction ◽  
Carbon Nanotube Forests

Substitution induced magnetic phase transitions and related electrical conduction mechanisms in LaFeO3 nanoparticle

2019 ◽  
Vol 126 (6) ◽  
pp. 064104 ◽  
Author(s):  
T. Lakshmana Rao ◽  
M. K. Pradhan ◽  
U. K. Goutam ◽  
V. Siruguri ◽  
V. R. Reddy ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Electrical Conduction ◽  
Magnetic Phase ◽  
Magnetic Phase Transitions ◽  
Conduction Mechanisms ◽  
Electrical Conduction Mechanisms

scholarly journals Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics

2020 ◽  
Vol 80 (10) ◽  
Author(s):  
S. Bhattarai ◽  
R. Panth ◽  
W.-Z. Wei ◽  
H. Mei ◽  
D.-M. Mei ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Conduction ◽  
High Purity ◽  
Localization Length ◽  
Rare Event ◽  
Conduction Mechanisms ◽  
Ge Detector ◽  
Electrical Conduction Mechanisms ◽  
P Type ◽  
Surface Leakage

AbstractFor the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $$2.13^{-0.05}_{+0.07}\mathrm{{A}}^\circ $$ 2 . 13 + 0.07 - 0.05 A ∘ to $$5.07^{-0.83}_{+2.58}\mathrm{{A}}^\circ $$ 5 . 07 + 2.58 - 0.83 A ∘ , depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.

Electrical conduction mechanisms of metal nanoclusters embedded in an amorphous Al2O3 matrix

2007 ◽  
Vol 515 (16) ◽  
pp. 6324-6327 ◽  
Author(s):  
A. Crunteanu ◽  
F. Dumas-Bouchiat ◽  
C. Champeaux ◽  
A. Catherinot ◽  
P. Blondy
Keyword(s):  
Electrical Conduction ◽  
Metal Nanoclusters ◽  
Conduction Mechanisms ◽  
Electrical Conduction Mechanisms ◽  
Amorphous Al2o3 ◽  
Al2o3 Matrix
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