The anisotropic size effect of the electrical resistivity of metal thin films: Tungsten

2017 ◽  
Vol 122 (13) ◽  
pp. 135301 ◽  
Author(s):  
Pengyuan Zheng ◽  
Daniel Gall
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Size Effect ◽  
Metal Thin Films

scholarly journals Controlling Electrical Conduction through Noble Metal Thin Films by Surface Plasmon Resonance

2020 ◽  
Vol 5 (3) ◽  
pp. 52
Author(s):  
Suresh C. Sharma ◽  
Vivek Khichar ◽  
Hussein Akafzade ◽  
Douglas Zinn ◽  
Nader Hozhabri
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Surface Plasmons ◽  
Noble Metal ◽  
Surface Plasmon ◽  
Polarized Light ◽  
Theoretical Models ◽  
Angle Of Incidence ◽  
Metal Thin Films ◽  
Resistivity Data

We have conducted in situ measurements of the surface plasmons and electrical resistivity of noble metal thin films. We present results for the electrical resistivity of these materials as functions of the angle of incidence for p-polarized light of wavelength λ = 632 nm in the Kretschmann configuration optical system. We observe a significantly lower resistivity (higher conductivity) under resonance conditions for the surface plasmon polaritons. The resistivity data are supported by COMSOL simulations of the evanescent fields associated with the surface plasmons. We discuss the resistivity data in terms of the theoretical models, which suggest that the electrical conductivity of the transition metals is sensitive to Umklapp electron-electron scattering and attractive interactions between free electrons because of the screening of the d-band electrons by the s-band electrons.

scholarly journals Interplay between quantum size effect and strain effect on growth of nanoscale metal thin films

2012 ◽  
Vol 86 (12) ◽  
Author(s):  
Miao Liu ◽  
Yong Han ◽  
Lin Tang ◽  
Jin-Feng Jia ◽  
Qi-Kun Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Size Effect ◽  
Quantum Size Effect ◽  
Strain Effect ◽  
Metal Thin Films ◽  
Quantum Size ◽  
Effect On Growth

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Laser-Direct Patterning of Nanostructured Metal Thin Films

2010 ◽  
Vol 48 (2) ◽  
pp. 163-168 ◽  
Author(s):  
Hyunkwon Shin ◽  
Hyeongjae Lee ◽  
Hyeongjae Yoo ◽  
Ki-Soo Lim ◽  
Myeongkyu Lee
Keyword(s):  
Thin Films ◽  
Metal Thin Films ◽  
Direct Patterning ◽  
Nanostructured Metal

scholarly journals Thickness dependent electrical resistivity modulation in tensile-strained epitaxial thin films of calcium manganese oxide

AIP Advances ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 045124
Author(s):  
Cacie Hart ◽  
Zoey Warecki ◽  
Grace Yong ◽  
David Houston ◽  
Rajeswari Kolagani
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Manganese Oxide ◽  
Epitaxial Thin Films

scholarly journals Nanoscale Transition Metal Thin Films: Growth Characteristics and Scaling Law for Interlayer Formation

2019 ◽  
Vol 11 (49) ◽  
pp. 46311-46326 ◽  
Author(s):  
Anirudhan Chandrasekaran ◽  
Robbert W. E. van de Kruijs ◽  
Jacobus M. Sturm ◽  
Andrey A. Zameshin ◽  
Fred Bijkerk
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Scaling Law ◽  
Growth Characteristics ◽  
Metal Thin Films

Fabrication of nanoporous noble metal thin films by O 2 plasma dealloying

2017 ◽  
Vol 631 ◽  
pp. 147-151 ◽  
Author(s):  
Geun-Hyuk Lee ◽  
Sehoon An ◽  
Seong Woo Jang ◽  
Sehoon Hwang ◽  
Sang Ho Lim ◽  
...  
Keyword(s):  
Thin Films ◽  
Noble Metal ◽  
Metal Thin Films

The Characteristics of Multilayer Thin Films Deposited with Metal Thin Films (Ag, Al, Cu)

2010 ◽  
Vol 97-101 ◽  
pp. 1768-1771 ◽  
Author(s):  
Dong Hun Kim ◽  
Riichi Murakami ◽  
Yun Hae Kim ◽  
Kyung Man Moon ◽  
Seung Jung An ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Particles ◽  
Zno Thin Films ◽  
Multilayer Thin Films ◽  
Electrical And Optical Properties ◽  
Metal Thin Films ◽  
Continuous Structure ◽  
Glass Substrates ◽  
The Difference ◽  
Sputtering System

In order to study the characteristics of multilayer thin films with a ZnO/ metal/ ZnO structure the manufacture of the thin films was performed by a dc (direct current) magnetron sputtering system on slide glass substrates. The ZnO thin films were manufactured with the thicknesses of 30 nm and 50 nm. Three kinds of metals (Ag, Al and Cu) were deposited with the thicknesses of 4 nm, 8 nm, 12 nm and 16 nm. The electrical and optical properties of the manufactured thin films were then observed. As a result, the multilayer thin films with an Ag layer represented the most excellent electrical conductivity. This is due to the difference in the fundamental electrical properties of each of the metals. The structures of the metal particles deposited on the ZnO thin films were observed by an SEM (scanning electron microscope). The thin films exhibited a continuous structure with regular spaces between the metal particles. This resulted in an increase of transmittance. This is considered by the decrease of scattering and of light absorption on thin films with a continuous structure.

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

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