scholarly journals Highly tunable electronic properties in plasma-synthesized B-doped microcrystalline-to-amorphous silicon nanostructure for solar cell applications

2017 ◽  
Vol 122 (13) ◽  
pp. 133112 ◽  
Author(s):  
J. W. M. Lim ◽  
J. G. D. Ong ◽  
Y. Guo ◽  
K. Bazaka ◽  
I. Levchenko ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Electronic Properties ◽  
Silicon Nanostructure

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

Synthesis and electronic properties of thiadiazole[3,4-c]pyridine copolymers for solar cell application

2016 ◽  
Vol 57 (9) ◽  
pp. 998-1002 ◽  
Author(s):  
Chinna Bathula ◽  
Pranav Kalode ◽  
Supriya Patil ◽  
Sang Kyu Lee ◽  
Ningaraddi S. Belavagi ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electronic Properties ◽  
Solar Cell Application

Hydrogenated Amorphous Silicon Nitride: Structural and Electronic Properties

1998 ◽  
Vol 538 ◽  
Author(s):  
J. F. Justo ◽  
F. De Brito Mota ◽  
A. Fazziom
Keyword(s):  
Silicon Nitride ◽  
Ab Initio ◽  
Amorphous Silicon ◽  
Electronic Properties ◽  
Interatomic Potential ◽  
Hydrogen Atoms ◽  
Hydrogen Incorporation ◽  
Amorphous Silicon Nitride ◽  
Structural And Electronic Properties ◽  
Hydrogenated Amorphous

AbstractWe combined empirical and ab initio methods to study structural and electronic properties of amorphous silicon nitride. For such study, we developed an interatomic potential to describe the interactions between silicon, nitrogen, and hydrogen atoms. Using this potential, we performed Monte Carlo simulations in a simulated annealing scheme to study structural properties of amorphous silicon nitride. Then this potential was used to generate relevant structures of a-SiNx:Hy which were input configurations to ab initio calculations. We investigated the electronic and structural role played by hydrogen incorporation in amorphous silicon nitride.

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