scholarly journals Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering

2017 ◽  
Vol 111 (23) ◽  
pp. 231901 ◽  
Author(s):  
Danhua Yan ◽  
Wenrui Zhang ◽  
Jiajie Cen ◽  
Eli Stavitski ◽  
Jerzy T. Sadowski ◽  
...  
2010 ◽  
Vol 21 (6) ◽  
pp. 065709 ◽  
Author(s):  
A Dev ◽  
R Niepelt ◽  
J P Richters ◽  
C Ronning ◽  
T Voss

2015 ◽  
Vol 17 (2) ◽  
pp. 1197-1203 ◽  
Author(s):  
Zaiping Zeng ◽  
Alexia Petoni ◽  
Christos S. Garoufalis ◽  
Sotirios Baskoutas ◽  
Gabriel Bester

Exciton polarization change in ultrathin ZnO nanowires.


2007 ◽  
Vol 90 (8) ◽  
pp. 083113 ◽  
Author(s):  
Congkang Xu ◽  
Junghwan Chun ◽  
Dong Eon Kim ◽  
Ju-Jin Kim ◽  
Bonghwan Chon ◽  
...  

2008 ◽  
Vol 53 (9(5)) ◽  
pp. 2844-2846 ◽  
Author(s):  
J.-P. Richters ◽  
T. Voss ◽  
L. Wischmeier ◽  
I. Rckmann ◽  
J. Gutowski

2011 ◽  
Vol 6 (1) ◽  
Author(s):  
Gwenole Jacopin ◽  
Lorenzo Rigutti ◽  
Andres De Luna Bugallo ◽  
François Henry Julien ◽  
Camilla Baratto ◽  
...  

2011 ◽  
Vol 04 (01) ◽  
pp. 25-29 ◽  
Author(s):  
SOUMEN DHARA ◽  
P. K. GIRI

In this letter, we report on the enhanced near band edge (NBE) photoluminescence (PL) emission by rapid thermal annealing (RTA) of ZnO nanowires, nanoribbons and nanorods synthesized by vapor transport method using a ZnO nanopowder source. As a result of RTA, the intensity ratio of NBE to green emission peak is nearly doubled for the nanowires, while this enhancement is one order of magnitude for the nanoribbons and nanorods. Time-resolved PL studies on the green emission band shows a single-exponential decay (time constant ~ns) after RTA. The Raman spectral shift of the RTA treated samples indicates reduced tensile strain in the annealed ZnO nanostructures. Our results demonstrate the effectiveness of RTA process for improving the crystallinity and optical properties of ZnO nanostructures.


2012 ◽  
Vol 57 (12) ◽  
pp. 1239
Author(s):  
G.Yu. Rudko ◽  
I.V. Dubrovin ◽  
A.I. Klimovskaya ◽  
E.G. Gule ◽  
P.M. Lytvyn ◽  
...  

Arrays of ZnO nanowires are grown by the vapor-liquid-solid method on a silicon substrate. The results of XRD, SEM, and AFM studies show that the diameters of nanowires vary in the range (50–300) nm, and their length is up to 40 μm. The wires exhibit bright photoluminescence: the band corresponding to the near band edge region and one or two (depending on the growth conditions) defect-related bands. The intensity ratio of the bands reflects the non-stoichiometry of the material and can be controlled by the zinc evaporation temperature and the temperature in the growing zone.


2011 ◽  
Vol 98 (13) ◽  
pp. 131111 ◽  
Author(s):  
A. Dev ◽  
J. P. Richters ◽  
J. Sartor ◽  
H. Kalt ◽  
J. Gutowski ◽  
...  

2010 ◽  
Vol 100 (1) ◽  
pp. 165-170 ◽  
Author(s):  
Qing Zhao ◽  
Tuocheng Cai ◽  
Sheng Wang ◽  
Rui Zhu ◽  
Zhimin Liao ◽  
...  

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