Ion induced stress relaxation in dense sputter-deposited DLC thin films

2017 ◽  
Vol 111 (5) ◽  
pp. 051902 ◽  
Author(s):  
Asim Aijaz ◽  
Tomas Kubart
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Induced Stress ◽  
Sputter Deposited

Moisture-induced stress relaxation of polyimide thin films

Polymer ◽  
2001 ◽  
Vol 42 (1) ◽  
pp. 319-328 ◽  
Author(s):  
H. Chung ◽  
C. Lee ◽  
H. Han
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Induced Stress

Hydrogenography of PdHx thin films: Influence of H-induced stress relaxation processes

2009 ◽  
Vol 57 (4) ◽  
pp. 1209-1219 ◽  
Author(s):  
R. Gremaud ◽  
M. Gonzalez-Silveira ◽  
Y. Pivak ◽  
S. de Man ◽  
M. Slaman ◽  
...  
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Relaxation Processes ◽  
Induced Stress

Binary-collision modeling of ion-induced stress relaxation in cubic BN and amorphous C thin films

2007 ◽  
Vol 90 (18) ◽  
pp. 181910 ◽  
Author(s):  
B. Abendroth ◽  
H. U. Jäger ◽  
W. Möller ◽  
M. Bilek
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Binary Collision ◽  
Induced Stress

Thermally induced stress relaxation and densification of spin-on-glass thin films

2000 ◽  
Vol 76 (4) ◽  
pp. 430-432 ◽  
Author(s):  
C. K. Chiang ◽  
W. E. Wallace ◽  
G. W. Lynn ◽  
D. Feiler ◽  
W. Xia
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Thermally Induced ◽  
Induced Stress

The Influence of Strengthening Mechanisms on Stress Relaxation in Thin Aluminum Metallization

1996 ◽  
Vol 436 ◽  
Author(s):  
Jonathan Gorrell ◽  
Paul Holloway ◽  
Hal Jerman
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Microelectromechanical Systems ◽  
Pure Aluminum ◽  
Age Hardening ◽  
Strengthening Mechanisms ◽  
Solid Solution Strengthening ◽  
Elastic Stresses ◽  
Aluminum Metallization ◽  
Sputter Deposited

AbstractWith the development of microelectromechanical systems there is a need for stronger aluminum thin films that resist stress relaxation. A number of strengthening mechanisms are used extensively for bulk aluminum alloys, but very few have been used to improve the performance of thin films. Pure aluminum, standard microelectronicsmetallization (A1-.04Cu-.017Si), alloy T201 (Al-.046Cu-.006Ag-.004Mn-.003Mg-.003Ti), and alloy 2090 (Al-.026Cu-.021Li-.001Zr) were electron beam evaporated or sputter deposited onto (100) silicon substrates.. Stress versus temperature and stress relaxation were measured in the films. Pure aluminum and AlSiCu alloy films exhibited plastic deformation at low stresses and low temperatures. The T201 and 2090 films exhibited residual elastic stresses at room temperature of 350 MPa and 500 MPa, and did not plastically deform until 240°C at 100 MPa stress, or 270°C at 200 MPa stress, respectively. The T201 film also showed a low stress relaxation rate. We speculate that solid solution strengthening caused the increase in strength of the T201 film, and that age hardening caused the increase in strength of the 2090 film.

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

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