scholarly journals Metastable defect response in CZTSSe from admittance spectroscopy

2017 ◽  
Vol 111 (14) ◽  
pp. 142105 ◽  
Author(s):  
Mark J. Koeper ◽  
Charles J. Hages ◽  
Jian V. Li ◽  
Dean Levi ◽  
Rakesh Agrawal
Keyword(s):  
Admittance Spectroscopy ◽  
Metastable Defect

Investigation of trapping states in a Nb‐doped rutile by admittance spectroscopy

1986 ◽  
Vol 60 (12) ◽  
pp. 4191-4196 ◽  
Author(s):  
K. Kobayashi ◽  
M. Takata ◽  
Y. Fujimura ◽  
S. Okamoto
Keyword(s):  
Admittance Spectroscopy

Thermal stability of a Si/Si1−xGex quantum well studied by admittance spectroscopy

2000 ◽  
Vol 87 (4) ◽  
pp. 1947-1950 ◽  
Author(s):  
Feng Lin ◽  
Da-wei Gong ◽  
Chi Sheng ◽  
Fang Lu ◽  
Xun Wang
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Admittance Spectroscopy ◽  
Thermal Stability Of

Admittance Spectroscopy of ZnO Crystals

1990 ◽  
Vol 29 (Part 1, No. 8) ◽  
pp. 1426-1430 ◽  
Author(s):  
Yasuo Kanai
Keyword(s):  
Admittance Spectroscopy

Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

1987 ◽  
Vol 50 (12) ◽  
pp. 736-738 ◽  
Author(s):  
D. V. Lang ◽  
M. B. Panish ◽  
F. Capasso ◽  
J. Allam ◽  
R. A. Hamm ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Band Offsets

Light-Induced Metastable Defects or Light-Induced Metastable H Atoms in a-Si:H Films?

1997 ◽  
Vol 467 ◽  
Author(s):  
C. Godet
Keyword(s):  
Experimental Data ◽  
Characteristic Time ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Exponential Time ◽  
Mobile Species ◽  
Hydrogenated Amorphous ◽  
Two Parameter ◽  
Metastable Defect ◽  
Trapping Sites

ABSTRACTIn hydrogenated amorphous silicon (a-Si:H) films, the increase of the metastable defect density under high-intensity illumination is usually described by an empirical two-parameter stretched-exponential time dependence (characteristic time τSE and dispersion parameter β). In this study, a clearly different (one-parameter) analytic function is obtained from a microscopic model based on the formation of metastable H (MSH) atoms in a-Si:H films. Assuming that MSH atoms are the only mobile species, only three chemical reactions are significant : MSH are produced from doubly hydrogenated (SiH HSi) configurations and trapped either at broken bonds or Si-H bonds, corresponding respectively to light-induced annealing (LIA) and light-induced creation (LIC) of defects. Competition between trapping sites results in a saturation of N(t) at a steady-state value Nss. A one-parameter fit of this analytical function to experimental data is generally good, indicating that the use of a statistical distribution of trap energies is not necessary.

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