Optical rectification using geometrical field enhancement in gold nano-arrays

2017 ◽  
Vol 122 (18) ◽  
pp. 183101 ◽  
Author(s):  
S. Piltan ◽  
D. Sievenpiper
Keyword(s):  
Field Enhancement ◽  
Optical Rectification ◽  
Geometrical Field

Analysis of Measured I(V) Relations for Electron Emission from Insulating Diamond Films on Various SI Substrates

1999 ◽  
Vol 558 ◽  
Author(s):  
K. L. Jensen ◽  
A. Göhl ◽  
G. Müller
Keyword(s):  
Experimental Data ◽  
Transport Model ◽  
Diamond Films ◽  
Field Enhancement ◽  
Interface Roughness ◽  
Positive Slope ◽  
Si Substrates ◽  
Roughness Model ◽  
Minimum Number ◽  
Geometrical Field

ABSTRACTIn this work, we shall analyze the performance of a geometrical interface roughness model to estimate current from p-type silicon into insulating diamond and compare the performance of that model to experimental data. A minimum number of adjustable parameters are invoked. While the model qualitatively accounts for trends in the experimental data, in particular, the shift from negative to positive slope on a Fowler Nordheim plot of the I(V) data, it does so at the expense of demanding ellipsoid parameters that appear to be unreasonable. We therefore conclude that a simple geometrical field enhancement model of interface roughness is insufficient to account for the current observed, and thus the theory must be augmented by a more comprehensive electron transport model at the interface.

scholarly journals Optical rectification and field enhancement in a plasmonic nanogap

2010 ◽  
Vol 5 (10) ◽  
pp. 732-736 ◽  
Author(s):  
Daniel R. Ward ◽  
Falco Hüser ◽  
Fabian Pauly ◽  
Juan Carlos Cuevas ◽  
Douglas Natelson
Keyword(s):  
Field Enhancement ◽  
Optical Rectification

Theory and Modelling of Field-Induced Electron Emission

2000 ◽  
Vol 621 ◽  
Author(s):  
Richard G. Forbes
Keyword(s):  
Amorphous Carbon ◽  
Electron Emission ◽  
Field Enhancement ◽  
Material Design ◽  
Internal Field ◽  
Carbon Films ◽  
Theory Approach ◽  
Amorphous Carbon Films ◽  
Electron Sources ◽  
Geometrical Field

ABSTRACTThis paper addresses issues in the theory of field-induced electron emission. First, it summarises our present understanding of the theory of Fowler-Nordheim (FN) plots, and shows the relationship between a recent precise (in standard FN theory) approach to the interpretation of the FN-plot intercept and older approximate approaches. Second, it comments on the interpretation of FN plots taken from semiconductor field emitters. Third, it summarises the main points of a recent hypothesis about the mechanism of field-induced emission from carbonbased films and other electrically nanostructured heterogeneous (ENH) materials. Weaknesses in previous hypotheses are noted. It is hypothesised that thin films of all ENH materials, when deposited on a conducting substrate, will emit electrons in appropriate circumstances. Such films emit electrons at low macroscopic fields because they contain conducting nanostructure inside them: this structure generates sufficient geometrical field enhancement near the film/vacuum interface that more-or-less normal Fowler-Nordheim emission can occur. In connection with experiments on amorphous carbon films carried out by a group in Fribourg, it is shown that nanostructure of the size measured by scanning probe techniques should be able to generate field enhancement of the size measured in field electron spectroscopy experiments. This result provides a quantitative corroboration of other work suggesting that emission from amorphous carbon films is primarily due to geometrical field enhancement by nanostructures inside the film. Some counter-arguments to the internal-field-enhancement hypothesis are considered and disposed of. Some advantages of ENH materials as broad-area field emission electron sources are noted; these include control of material design.

An Electrochemical Study of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
J. D. L'ecuyer ◽  
J. P. G. Farr
Keyword(s):  
Charge Transfer ◽  
Porous Silicon ◽  
Surface Chemistry ◽  
Valence Band ◽  
Surface State ◽  
Field Enhancement ◽  
Valence Band Edge ◽  
Adsorption Sites ◽  
Impedance Characteristics ◽  
Geometrical Field

ABSTRACTThe I-V and impedance characteristics of p and n-type silicon electrodes in HF solutions have been determined. Three different I-V regimes are observed, one of which is associated with the on-set of localized dissolution. The formation of porous silicon takes place via a surface state mediated charge transfer mechanism. The position of the main recombination-generation center is estimated at 400 mV above the valence band edge. Localized dissolution is initiated at or close to active adsorption sites. It is then favoured because of geometrical field enhancement effects. Porous silicon has a surface chemistry that can be significant in luminescence.

Geometrical field enhancement on micropatterned nanodiamond film for electron emissions

2006 ◽  
Vol 15 (2-3) ◽  
pp. 417-425 ◽  
Author(s):  
K. Subramanian ◽  
W.P. Kang ◽  
J.L. Davidson ◽  
J.D. Jarvis ◽  
W.H. Hofmeister ◽  
...  
Keyword(s):  
Field Enhancement ◽  
Electron Emissions ◽  
Geometrical Field

Scanning-tunneling spectroscopy on conjugated polymer films

2003 ◽  
Vol 771 ◽  
Author(s):  
M. Kemerink ◽  
S.F. Alvarado ◽  
P.M. Koenraad ◽  
R.A.J. Janssen ◽  
H.W.M. Salemink ◽  
...  
Keyword(s):  
Polymer Films ◽  
Conjugated Polymer ◽  
Three Dimensional ◽  
Field Enhancement ◽  
Direct Consequence ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Band Alignment ◽  
Scanning Tunneling ◽  
Order Of Magnitude

AbstractScanning-tunneling spectroscopy experiments have been performed on conjugated polymer films and have been compared to a three-dimensional numerical model for charge injection and transport. It is found that field enhancement near the tip apex leads to significant changes in the injected current, which can amount to more than an order of magnitude, and can even change the polarity of the dominant charge carrier. As a direct consequence, the single-particle band gap and band alignment of the organic material can be directly obtained from tip height-voltage (z-V) curves, provided that the tip has a sufficiently sharp apex.

MAGNETIC FIELD, PRESSURE AND TEMPERATURE DEPENDENT OPTICAL PROPERTIES IN A GaAs 9.0 P 1.0 QUANTUM DOT

2014 ◽  
Vol 6 (2) ◽  
pp. 1178-1190
Author(s):  
A. JOHN PETER ◽  
Ada Vinolin
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Dot ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Photon Energy ◽  
Nonlinear Optical ◽  
Binding Energies ◽  
Nonlinear Optical Properties ◽  
Optical Rectification

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.

Colloidal Plasmonic Nanostar Antennas with Wide Range Resonance Tunability

2019 ◽  
Author(s):  
Theodoros Tsoulos ◽  
Supriya Atta ◽  
Maureen Lagos ◽  
Michael Beetz ◽  
Philip Batson ◽  
...  
Keyword(s):  
Single Particle ◽  
Structural Complexity ◽  
Field Enhancement ◽  
Hot Electron ◽  
Structure Property ◽  
Plasmon Band ◽  
Gold Nanostars ◽  
Wide Range ◽  
Particle Level ◽  
Spectrally Resolved

<div>Gold nanostars display exceptional field enhancement properties and tunable resonant modes that can be leveraged to create effective imaging tags or phototherapeutic agents, or to design novel hot-electron based photocatalysts. From a fundamental standpoint, they represent important tunable platforms to study the dependence of hot carrier energy and dynamics on plasmon band intensity and position. Toward the realization of these platforms, holistic approaches taking into account both theory and experiments to study the fundamental behavior of these</div><div>particles are needed. Arguably, the intrinsic difficulties underlying this goal stem from the inability to rationally design and effectively synthesize nanoparticles that are sufficiently monodispersed to be employed for corroborations of the theoretical results without the need of single particle experiments. Herein, we report on our concerted computational and experimental effort to design, synthesize, and explain the origin and morphology-dependence of the plasmon modes of a novel gold nanostar system, with an approach that builds upon the well-known plasmon hybridization model. We have synthesized monodispersed samples of gold nanostars with finely tunable morphology employing seed-mediated colloidal protocols, and experimentally observed narrow and spectrally resolved harmonics of the primary surface plasmon resonance mode both at the single particle level (via electron energy loss spectroscopy) and in ensemble (by UV-Vis and ATR-FTIR spectroscopies). Computational results on complex anisotropic gold nanostructures are validated experimentally on samples prepared colloidally, underscoring their importance as ideal testbeds for the study of structure-property relationships in colloidal nanostructures of high structural complexity.</div>

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