Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

2017 ◽  
Vol 111 (3) ◽  
pp. 033501 ◽  
Author(s):  
Yu-Heng Liu ◽  
Cheng-Min Jiang ◽  
Hsiao-Yi Lin ◽  
Tahui Wang ◽  
Wen-Jer Tsai ◽  
...  
Keyword(s):  
Flash Memory ◽  
Lateral Transport ◽  
Random Telegraph Signal ◽  
Charge Trap ◽  
A Charge ◽  
Signal Method

Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device

2010 ◽  
Vol 96 (22) ◽  
pp. 222902 ◽  
Author(s):  
Jong Kyung Park ◽  
Youngmin Park ◽  
Sung Kyu Lim ◽  
Jae Sub Oh ◽  
Moon Sig Joo ◽  
...  
Keyword(s):  
High Temperature ◽  
Flash Memory ◽  
Memory Performance ◽  
Memory Device ◽  
Blocking Layer ◽  
High Temperature Annealing ◽  
Charge Trap ◽  
A Charge

Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device

2010 ◽  
Vol 3 (9) ◽  
pp. 091501 ◽  
Author(s):  
Jong Kyung Park ◽  
Youngmin Park ◽  
Myeong Ho Song ◽  
Sung Kyu Lim ◽  
Jae Sub Oh ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Blocking Layer ◽  
Charge Trap ◽  
A Charge

A Charge Trap Folded nand Flash Memory Device With Band-Gap-Engineered Storage Node

2011 ◽  
Vol 58 (2) ◽  
pp. 288-295 ◽  
Author(s):  
Seongjae Cho ◽  
Won Bo Shim ◽  
Yoon Kim ◽  
Jang-Gn Yun ◽  
Jong Duk Lee ◽  
...  
Keyword(s):  
Band Gap ◽  
Flash Memory ◽  
Memory Device ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Charge Trap ◽  
Storage Node ◽  
A Charge

A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory

2011 ◽  
Vol 58 (3) ◽  
pp. 623-630 ◽  
Author(s):  
Huan-Chi Ma ◽  
You-Liang Chou ◽  
Jung-Piao Chiu ◽  
Yueh-Ting Chung ◽  
Tung-Yang Lin ◽  
...  
Keyword(s):  
Flash Memory ◽  
Lateral Spread ◽  
Study Program ◽  
Random Telegraph Signal ◽  
Retention Loss ◽  
Signal Method

scholarly journals Investigation of Re-program Scheme in Charge Trap Based 3D NAND Flash Memory

2021 ◽  
pp. 1-1
Author(s):  
Ting Cheng ◽  
Jianquan Jia ◽  
Lei Jin ◽  
Xinlei Jia ◽  
Shiyu Xia ◽  
...  
Keyword(s):  
Flash Memory ◽  
Program Scheme ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Charge Trap

scholarly journals A Comparison Study on Multilayered Barrier Oxide Structure in Charge Trap Flash for Synaptic Operation

Crystals ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 70
Author(s):  
Minkyung Kim ◽  
Eunpyo Park ◽  
In Soo Kim ◽  
Jongkil Park ◽  
Jaewook Kim ◽  
...  
Keyword(s):  
Memory Device ◽  
Spike Timing ◽  
Comparison Study ◽  
Oxide Structure ◽  
Charge Trap ◽  
Synaptic Functions ◽  
Essential Components ◽  
Neuromorphic System ◽  
A Charge ◽  
Synaptic Operation

A synaptic device that contains weight information between two neurons is one of the essential components in a neuromorphic system, which needs highly linear and symmetric characteristics of weight update. In this study, a charge trap flash (CTF) memory device with a multilayered high-κ barrier oxide structure on the MoS2 channel is proposed. The fabricated device was oxide-engineered on the barrier oxide layers to achieve improved synaptic functions. A comparison study between two fabricated devices with different barrier oxide materials (Al2O3 and SiO2) suggests that a high-κ barrier oxide structure improves the synaptic operations by demonstrating the increased on/off ratio and symmetry of synaptic weight updates due to a better coupling ratio. Lastly, the fabricated device has demonstrated reliable potentiation and depression behaviors and spike-timing-dependent plasticity (STDP) for use in a spiking neural network (SNN) neuromorphic system.

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