scholarly journals Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (9) ◽  
pp. 095214 ◽  
Author(s):  
Aheli Ghosh ◽  
Michael B. Clavel ◽  
Peter D. Nguyen ◽  
Michael A. Meeker ◽  
Giti A. Khodaparast ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural And Electrical Properties

On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy

2017 ◽  
Vol 17 (3) ◽  
pp. 327-332 ◽  
Author(s):  
Sudipta Das ◽  
Krista R. Khiangte ◽  
Rajveer S. Fandan ◽  
Jaswant S. Rathore ◽  
Ravindra S. Pokharia ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural And Electrical Properties

scholarly journals Structural and electrical properties of Pb(Zr,Ti)O3 films grown by molecular beam epitaxy

2007 ◽  
Vol 91 (18) ◽  
pp. 182906 ◽  
Author(s):  
N. Izyumskaya ◽  
V. Avrutin ◽  
X. Gu ◽  
B. Xiao ◽  
S. Chevtchenko ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural And Electrical Properties

Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers

2000 ◽  
Vol 622 ◽  
Author(s):  
R. Dimitrov ◽  
V. Tilak ◽  
M. Murphy ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Structural And Electrical Properties ◽  
Metalorganic Chemical

ABSTRACTIn this study thin AlxGa1−xN nucleation layers on sapphire were patterned and overgrown by plasma-induced molecular beam epitaxy (PIMBE) and metalorganic chemical vapor deposition (MOCVD) to obtain adjacent regions of GaN and AlGaN/GaN heterostructures with different polarities. The role of polarity on the structural and electrical properties of epitaxial layers and AlGaN/GaN heterostructures was investigated for samples grown on patterned AlN or GaN nucleation layers. Epitaxial GaN and AlGaN/GaN heterostructures grown on Al-face AlN or N- face GaN nucleation layers were found to be Ga-face or N-face, respectively, independent of the technique used for the overgrowth.

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