scholarly journals The impact of alloy cluster scattering on low-temperature mobility of 2D electron gas in Zn1-xMgxO/ZnO heterostructures

AIP Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 065216
Author(s):  
Hongyan Chen ◽  
Ping Wang ◽  
Jingsi Cheng ◽  
Zhaoling Li ◽  
Lixin Guo
Keyword(s):  
Low Temperature ◽  
Electron Gas ◽  
2D Electron Gas ◽  
Alloy Cluster ◽  
The Impact

Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures

2010 ◽  
Vol 645-648 ◽  
pp. 259-262
Author(s):  
Alexander A. Lebedev ◽  
Pavel L. Abramov ◽  
Elena V. Bogdanova ◽  
Sergey Y. Davydov ◽  
Sergey P. Lebedev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Energy Range ◽  
Temperature Dependence ◽  
Band Gap ◽  
Liquid Nitrogen ◽  
Electron Mobility ◽  
Electron Gas ◽  
2D Electron Gas ◽  
Pl Spectra

Photoluminescence (PL) spectra of 3C-SiC(n,p)/6H-SiC(n) and 3C-SiC(p)/15R-SiC(n) heterostructures have been studied. A broad structureless band, absent in PL spectra of n–n heterostructures, was observed in the spectrum of p–n heterostructures in the energy range 2.2–2.4 eV. It is suggested that this band is due to the presence of a 2D electron gas in a quantum well near the heterointerface. High (~ 4000 cm2/s V) value of electron mobility and the absence of any significant fall in the mobility temperature dependence at liquid-nitrogen temperatures confirm the existence of a 2DEG in the QW at the heterointerface.

scholarly journals Effects of equal channel angular pressing and heat treatments on the microstructures and mechanical properties of selective laser melted and cast AlSi10Mg alloys

2021 ◽  
Vol 21 (3) ◽  
Author(s):  
Przemysław Snopiński ◽  
Mariusz Król ◽  
Marek Pagáč ◽  
Jana Petrů ◽  
Jiří Hajnyš ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Low Temperature ◽  
Equal Channel Angular Pressing ◽  
Heat Treatments ◽  
Electron Backscattered Diffraction ◽  
Angular Pressing ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Before And After ◽  
The Impact

AbstractThis study investigated the impact of the equal channel angular pressing (ECAP) combined with heat treatments on the microstructure and mechanical properties of AlSi10Mg alloys fabricated via selective laser melting (SLM) and gravity casting. Special attention was directed towards determining the effect of post-fabrication heat treatments on the microstructural evolution of AlSi10Mg alloy fabricated using two different routes. Three initial alloy conditions were considered prior to ECAP deformation: (1) as-cast in solution treated (T4) condition, (2) SLM in T4 condition, (3) SLM subjected to low-temperature annealing. Light microscopy, transmission electron microscopy, X-ray diffraction line broadening analysis, and electron backscattered diffraction analysis were used to characterize the microstructures before and after ECAP. The results indicated that SLM followed by low-temperature annealing led to superior mechanical properties, relative to the two other conditions. Microscopic analyses revealed that the partial-cellular structure contributed to strong work hardening. This behavior enhanced the material’s strength because of the enhanced accumulation of geometrically necessary dislocations during ECAP deformation.

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

WSe2/2D electron gas heterojunction on KTaO3 for room-temperature giant photoconductivity

2020 ◽  
Author(s):  
Ze Zhou ◽  
Gensheng Huang ◽  
Jiaxin Shen ◽  
Shuainan Gong ◽  
Pengfei Zhou ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electron Gas ◽  
2D Electron Gas

scholarly journals TRANSPORT PROPERTIES OF 2D ELECTRON GAS IN AN n-InGaAs/GaAs DQW IN A VICINITY OF LOW MAGNETIC-FIELD-INDUCED HALL INSULATOR–QUANTUM HALL LIQUID TRANSITION

2007 ◽  
Vol 06 (03n04) ◽  
pp. 173-177
Author(s):  
YU. G. ARAPOV ◽  
S. V. GUDINA ◽  
G. I. HARUS ◽  
V. N. NEVEROV ◽  
N. G. SHELUSHININA ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Quantum Hall ◽  
Zero Magnetic Field ◽  
Double Quantum ◽  
Ballistic Regime ◽  
2D Electron Gas ◽  
Double Quantum Well ◽  
Liquid Transition ◽  
Low Magnetic Field

The resistivity (ρ) of low mobility dilute 2D electron gas in an n- InGaAs / GaAs double quantum well (DQW) exhibits the monotonic "insulating-like" temperature dependence (dρ/dT < 0) at T = 1.8–70 K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kBTτ/ħ > 0.1–3.5) for our samples, and the electron density is on an "insulating" side of the so-called B = 0 2D metal–insulator transition. We show that the observed features of localization and Landau quantization in a vicinity of the low magnetic-field-induced insulator–quantum Hall liquid transition is due to the σxy(T) anomalous T-dependence.

scholarly journals Universal Structural Influence on the 2D Electron Gas at SrTiO 3 Surfaces

2021 ◽  
pp. 2100602
Author(s):  
Eduardo B. Guedes ◽  
Stefan Muff ◽  
Walber H. Brito ◽  
Marco Caputo ◽  
Hang Li ◽  
...  
Keyword(s):  
Electron Gas ◽  
2D Electron Gas ◽  
Structural Influence

Interwell radiative recombination of a 2D electron gas in electrically biased double quantum wells

1998 ◽  
Vol 41 (2) ◽  
pp. 109-112 ◽  
Author(s):  
Vladislav B Timofeev ◽  
A V Larionov ◽  
J Zeman ◽  
G Martinez ◽  
J Hvam ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Electron Gas ◽  
Double Quantum ◽  
2D Electron Gas

Study on the Dyeing Behavior of Wool Fiber Treated with Nano-SiO2/Ag Antibacterial Agent

2011 ◽  
Vol 332-334 ◽  
pp. 27-30 ◽  
Author(s):  
Mei Niu ◽  
Zi Lu Wu ◽  
Jin Ming Dai ◽  
Wen Sheng Hou ◽  
Sheng Shi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Antibacterial Agent ◽  
Important Influence ◽  
Wool Fiber ◽  
Experimental Results ◽  
Ultrasonic Frequency ◽  
Acid Dyes ◽  
Nano Sio2 ◽  
Dyeing Process ◽  
The Impact

Wool fiber was firstly pretreated by nano-SiO2/Ag antibacterial agent, and then dyed with an acid dyes at low temperature by ultrasonic dyeing. Many factors had an important influence on the dye ability and the antibacterial behavior during the dyeing process of antibacterial wool fiber. The experimental results indicate that the dye-takeup rates of antibacterial wool fiber were enhanced with the increase of the concentration of nano-SiO2/Ag, the dyeing temperature, the dyeing time and the ultrasonic frequency (less than 60Hz). However, the antibacterial ratios of wool fiber were declined in the impact of these factors other than the concentration of antibacterial agent.

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