Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and its application to imaging two-dimensional distribution of SiO2/SiC interface traps

2017 ◽  
Vol 122 (10) ◽  
pp. 105701 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Interface Traps ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Dimensional Distribution ◽  
Transient Spectroscopy

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

Two-Dimensional Imaging of Trap Distribution in SiO2/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2017 ◽  
Vol 897 ◽  
pp. 127-130
Author(s):  
Norimichi Chinone ◽  
Ryoji Kosugi ◽  
Yasunori Tanaka ◽  
Shinsuke Harada ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Transient Spectroscopy ◽  
A New Technique

A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique, SiO2/SiC structure samples with different post oxidation annealing (POA) conditions were measured. We observed that the local DLTS signal decreases with POA levels, which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiO2/SiC interface.

Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy

2016 ◽  
Vol 64 ◽  
pp. 566-569 ◽  
Author(s):  
N. Chinone ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
H. Okumura ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Nonlinear Dielectric ◽  
Transient Spectroscopy

Near-interface Traps in n-type SiO2/SiC MOS Capacitors from Energy-resolved CCDLTS

2010 ◽  
Vol 1246 ◽  
Author(s):  
Alberto F Basile ◽  
Sarit Dhar ◽  
John Rozen ◽  
Xudong Chen ◽  
John Williams ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Electron Emission ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Emission Rates ◽  
Mos Capacitors ◽  
Transient Spectroscopy

AbstractSilicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy

2017 ◽  
Vol 897 ◽  
pp. 111-114 ◽  
Author(s):  
Martin Hauck ◽  
Julietta Weisse ◽  
Johannes Lehmeyer ◽  
Gregor Pobegen ◽  
Heiko B. Weber ◽  
...  
Keyword(s):  
Hall Effect ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Drain Current ◽  
Charge Carrier Density ◽  
Interface Traps ◽  
Quantitative Investigation ◽  
Inversion Charge ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy

Drain current DLTS (ID-DLTS) and Hall effect measurements were carried out on two types of 4H-SiC n-MOSFETs, one with a post oxidation annealing (POA) in NO and one in O2 atmosphere. Hall effect measurements show a reduction of Dit by POA in NO compared to POA in O2 and, as a consequence, a higher inversion charge carrier density, while the Hall mobility is only weakly affected by the introduction of nitrogen during POA. Based on ID-DLTS we provide a method for a quantitative and selective investigation of near interface traps (NITs) in the oxide. It is shown that POA in NO strongly reduces the density of NITs.

A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen

2008 ◽  
Vol 600-603 ◽  
pp. 755-758 ◽  
Author(s):  
Fredrik Allerstam ◽  
Einar Ö. Sveinbjörnsson
Keyword(s):  
Energy Level ◽  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Interface Traps ◽  
Enhanced Oxidation ◽  
Transient Spectroscopy

This study is focused on characterization of deep energy-level interface traps formed during sodium enhanced oxidation of n-type Si face 4H-SiC. The traps are located 0.9 eV below the SiC conduction band edge as revealed by deep level transient spectroscopy. Furthermore these traps are passivated using post-metallization anneal at 400°C in forming gas ambient.

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