Back surface field approach: Surface and interface defect states optimization of high efficient Si-ZnO based heterojunction solar cell

2017 ◽  
Vol 9 (3) ◽  
pp. 033504 ◽  
Author(s):  
D. Muchahary ◽  
S. Maity ◽  
C. T. Bhunia
Keyword(s):  
Solar Cell ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Defect States ◽  
Back Surface Field ◽  
Field Approach ◽  
Surface And Interface ◽  
Surface Field ◽  
Interface Defect ◽  
High Efficient

Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell

2009 ◽  
Vol 30 (6) ◽  
pp. 064006 ◽  
Author(s):  
Hu Yuehui ◽  
Zhang Xiangwen ◽  
Qu Minghao ◽  
Wang Lifu ◽  
Zeng Tao ◽  
...  
Keyword(s):  
Solar Cell ◽  
Simulation Analysis ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Back Surface Field ◽  
Surface Field

Bifacial Silicon Heterojunction Solar Cell with Deposited Back Surface Field

2005 ◽  
Vol 862 ◽  
Author(s):  
H. D. Goldbach ◽  
A. Bink ◽  
R. E. I Schropp
Keyword(s):  
Activation Energy ◽  
Solar Cell ◽  
Quantum Efficiency ◽  
Silicon Wafers ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Rear Side ◽  
Back Surface Field ◽  
Surface Field ◽  
Silicon Heterojunction Solar Cell

AbstractSilicon heterojunction cells (SHJ) using crystalline silicon wafers and deposited heterojunction thin film emitters are interesting from an economical, technological, and sc ientific point of view. Modules using such cells (so called HIT cells) are commercially produced by Sanyo Electric Co., using single crystal wafers. Recently reported alternatives still comprise a high-temperature diffused back surface field (BSF). In order to provide a low cost alternative, our goal is to develop SHJ using multicrystalline silicon wafers with both a deposited emitter and a deposited BSF. The present approach truly allows the development of a cheap, low temperature, all-deposited alternative for the HIT cell.We made a bifacial silicon heterojunction solar cell, with an emitter consisting of a 7 nm intrinsic a-Si:H layer and a 15 nm n-type μc-Si:H layer. The back surface field is formed by a 30 nm p++ μc-Si:H layer. In order to achieve a functional deposited BSF the thin p++-layer has to have higher effective dopant concentration than the substrate. We used a 375 μm thick FZ wafer with a resistance of 1 cm with an activation energy of 0.2 eV. The μc-Si:H p++-layer has an activation energy of Ea = 0.082 eV. To detect the operation of the BSF the cell was made bifacial. The cell has an efficiency of 14.87 %, Voc = 571.4 mV and Jsc = 33.3 mA/cm2, Rs = 1.2 Ωcm2 and Rp = 1.8 kΩcm2. The cell, illuminated from the back, shows a Voc of 0.1 V and Jsc of 7 mA/cm2. Reference bifacial cells without BSF show no cell behavior illuminated from the rear side. External quantum efficiency (EQE) measurements with illumination at the rear side of the bifacial heterojunction cell with BSF show a quantum efficiency value of 0.17 in the range 500-800 nm, while the reference cell without BSF shows zero quantum efficiency in this range. These results show evidence for the feasibility of a truly functioning deposited BSF combined with a SHJ with deposited emitter.

scholarly journals Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Short Circuit ◽  
Back Surface ◽  
Back Surface Field ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Surface Field

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

Back surface field and vertical solar cell

1982 ◽  
Vol 53 (4) ◽  
pp. 3333-3334 ◽  
Author(s):  
Yu‐Tung Yang
Keyword(s):  
Solar Cell ◽  
Back Surface ◽  
Back Surface Field ◽  
Surface Field

Diffused back surface field formation in combination with two-step H2annealing for improvement of silicon nanowire-based solar cell efficiency

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CP01 ◽  
Author(s):  
Wipakorn Jevasuwan ◽  
Ken C. Pradel ◽  
Thiyagu Subramani ◽  
Junyi Chen ◽  
Toshiaki Takei ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Nanowire ◽  
Back Surface ◽  
Solar Cell Efficiency ◽  
Back Surface Field ◽  
Cell Efficiency ◽  
Surface Field ◽  
Field Formation

Efficient materials for thin-film CdTe solar cell based on back surface field and distributed Bragg reflector

2019 ◽  
Vol 126 (1) ◽  
Author(s):  
Syed Asfandyar Ali Kazmi ◽  
Aimal Daud Khan ◽  
Adnan Daud Khan ◽  
Abdul Rauf ◽  
Waqas Farooq ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Bragg Reflector ◽  
Back Surface ◽  
Distributed Bragg Reflector ◽  
Back Surface Field ◽  
Cdte Solar Cell ◽  
Surface Field
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