Effect of annealing and hydrogen plasma treatment on the luminescence and persistent photoconductivity of polycrystalline ZnO films

2017 ◽  
Vol 121 (24) ◽  
pp. 245303 ◽  
Author(s):  
Kh. A. Abdullin ◽  
G. Cicero ◽  
L. V. Gritsenko ◽  
S. E. Kumekov ◽  
A. A. Markhabaeva
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Zno Films ◽  
Persistent Photoconductivity

Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment

2009 ◽  
Vol 105 (8) ◽  
pp. 083713 ◽  
Author(s):  
P. F. Cai ◽  
J. B. You ◽  
X. W. Zhang ◽  
J. J. Dong ◽  
X. L. Yang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Zno Films

Enhanced conductivity of aluminum doped ZnO films by hydrogen plasma treatment

2010 ◽  
Vol 518 (24) ◽  
pp. 7445-7449 ◽  
Author(s):  
H.P. Chang ◽  
F.H. Wang ◽  
J.Y. Wu ◽  
C.Y. Kung ◽  
H.W. Liu
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Zno Films ◽  
Doped Zno ◽  
Enhanced Conductivity

Improvement in Wide-Gap A-SI:H For High-Efficiency Solar Cells

1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
High Efficiency ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
High Efficiency Solar Cells ◽  
Wide Gap

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.

Persistent photoconductivity in highly porous ZnO films

2007 ◽  
Vol 101 (1) ◽  
pp. 013709 ◽  
Author(s):  
Jens Reemts ◽  
Achim Kittel
Keyword(s):  
Zno Films ◽  
Persistent Photoconductivity ◽  
Highly Porous

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance
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