Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si

2017 ◽  
Vol 122 (13) ◽  
pp. 133101 ◽  
Author(s):  
A. I. Yakimov ◽  
V. V. Kirienko ◽  
A. A. Bloshkin ◽  
V. A. Armbrister ◽  
A. V. Dvurechenskii
Keyword(s):  
Quantum Dots ◽  
Infrared Photodetectors ◽  
Mid Infrared ◽  
Plasmon Polariton ◽  
Ge Quantum Dots

Enhanced Optical Properties of Silicon Based Quantum Dot Heterostructures

2018 ◽  
Vol 386 ◽  
pp. 68-74 ◽  
Author(s):  
Anatoly Dvurechenskii ◽  
Andrew Yakimov ◽  
Victor Kirienko ◽  
Alekcei Bloshkin ◽  
Vladimir Zinovyev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Dot ◽  
Mid Infrared ◽  
Device Application ◽  
Elemental Compositions ◽  
New Approaches ◽  
Ge Quantum Dots ◽  
Silicon Based ◽  
Is Strain

New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si (100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

Inter-Sub-Level Spectroscopy of P-Type Modulation-Doped Ge Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
J. L. Liu ◽  
W. G. Wu ◽  
G. Jin ◽  
Y. H. Luo ◽  
S. G. Thomas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Molecular Beam ◽  
Heavy Hole ◽  
Infrared Detector ◽  
Infrared Range ◽  
Mid Infrared ◽  
Boron Doped ◽  
Ge Quantum Dots ◽  
P Type

ABSTRACTInter-sub-level transitions in p-type modulation-doped Ge quantum dots are observed. The structure is grown by molecular beam epitaxy and consists of 30 periods of Ge quantum dots separated by 6 nm boron-doped Si layers. An absorption peak in the mid-infrared range is observed at room temperature by Fourier transform infrared spectroscopy, and is attributed to the transition between the first two heavy hole states of the Ge quantum dots. This study suggests the possible use of modulation-doped Ge quantum dots for improved infrared detector application.

Optical study of ge quantum dots and infrared photodetectors

2005 ◽  
Author(s):  
Rongshan Wei ◽  
Ning Deng ◽  
Minsheng Wang ◽  
Shuang Zhang ◽  
Peiyi Chen
Keyword(s):  
Quantum Dots ◽  
Infrared Photodetectors ◽  
Optical Study ◽  
Ge Quantum Dots

GERMANIUM SELF-ASSEMBLED QUANTUM DOTS IN SILICON FOR MID-INFRARED PHOTODETECTORS

2002 ◽  
Vol 12 (03) ◽  
pp. 873-889
Author(s):  
ANDREW I. YAKIMOV ◽  
ANATOLII V. DVURECHENSKII
Keyword(s):  
Quantum Dots ◽  
Field Effect ◽  
Bound States ◽  
Infrared Photodetectors ◽  
Dense Array ◽  
Operating Characteristics ◽  
Mid Infrared ◽  
Continuum States ◽  
Quantum Dot Infrared Photodetectors ◽  
Self Assembled

We present an overview of the experimental results in the field of quantum dot infrared photodetectors (QDIPs) implemented on Ge self-assembled quantum dots (QDs) in Si. QDs are fabricated using Stranski-Krastanov epitaxial growth mode. The effect of photoconductivity is associated with the photoexciation of holes from bound to bound states in Ge QDs or from bound states in Ge dots to continuum states in the Ge wetting and Si barrier layers. The depolarization field effect in the collective interlevel excitations of a dense array of Ge/Si QDs is discussed. The comparison between operating characteristics of QDIPs based on III–V and Ge/Si heterostructures is included.

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