Fabrication and characterization of sputtered Cu2O:N/c-Si heterojunction diode

2017 ◽  
Vol 111 (9) ◽  
pp. 093501 ◽  
Author(s):  
Yuki Takiguchi ◽  
Yutaro Takei ◽  
Kazuyoshi Nakada ◽  
Shinsuke Miyajima
Keyword(s):  
Heterojunction Diode ◽  
Fabrication And Characterization

Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors

2008 ◽  
Vol 37 (9) ◽  
pp. 1391-1395 ◽  
Author(s):  
M. Yokota ◽  
K. Yasuda ◽  
M. Niraula ◽  
K. Nakamura ◽  
H. Ohashi ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Heterojunction Diode ◽  
Gamma Ray Detectors ◽  
Fabrication And Characterization

Fabrication and characterization of n-ZnO/p-GaSb heterojunction diode

2019 ◽  
Vol 36 (4) ◽  
pp. 143-149
Author(s):  
Farida Ashraf Ali ◽  
Gouranga Bose ◽  
Sushanta Kumar Kamilla ◽  
Dilip Kumar Mishra ◽  
Priyabrata Pattanaik
Keyword(s):  
Gallium Antimonide ◽  
Thermal Evaporation ◽  
Semiconductor Device ◽  
Vertical Direction ◽  
Phase Identification ◽  
Heterojunction Diode ◽  
Thermal Evaporation Method ◽  
Content Type ◽  
Fabrication And Characterization

Purpose The purpose of this paper is to examine the growth and characterization of the two different compound semiconductors, namely, n-zinc oxide (ZnO) and p-gallium antimonide (GaSb). In this paper, fabrication and characterization of n-ZnO/p-GaSb heterojunction diode is analyzed. Design/methodology/approach Thermo vertical direction solidification (TVDS) method was used to synthesize undoped GaSb ingot from high purity Ga (5N) and Sb (4N) host materials. Thermal evaporation technique is used to prepare a film of GaSb on glass substrate from the pre-synthesized bulk material by TVDS method. Undoped ZnO film was grown on GaSb film by sol–gel method by using chemical wet and dry (CWD) technique to fabricate n-ZnO/p-GaSb heterojunction diode. Findings The formation of crystalline structure and surface morphological analysis of both the GaSb bulk and film have been carried out by x-ray diffraction (XRD) analysis and scanning electron microscopy analysis. From the XRD studies, the structural characterization and phase identification of ZnO/GaSb interface. The current–voltage characteristic of the n-ZnO/p-GaSb heterostructure is found to be rectifying in nature. Originality/value GaSb film growth on any substrate by thermal evaporation method taking a small piece of the sample from the pre-synthesized GaSb bulk ingot has not been reported yet. Semiconductor device with heterojunction diode by using two different semiconductors such as ZnO/GaSb was used by this group for the first time.

Fabrication and Characterization of n-ZnO Nanonails Array/p+-GaN Heterojunction Diode

2012 ◽  
Vol 12 (10) ◽  
pp. 7950-7953
Author(s):  
G. Y. Zhu ◽  
G. F. Chen ◽  
J. T. Li ◽  
Z. L. Shi ◽  
Y. Lin ◽  
...  
Keyword(s):  
Heterojunction Diode ◽  
Fabrication And Characterization

Fabrication and characterization of ZnO nanocrystal/p-Si heterojunction diode

2016 ◽  
Vol 27 (10) ◽  
pp. 10921-10925
Author(s):  
Zhaolin Yuan ◽  
Mingxing Fu ◽  
Yajie Ren ◽  
Chunjiang Shuai ◽  
Juncai Yao
Keyword(s):  
Heterojunction Diode ◽  
Fabrication And Characterization ◽  
Zno Nanocrystal

Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode

2012 ◽  
Vol 717-720 ◽  
pp. 1323-1326
Author(s):  
M. Guziewicz ◽  
W. Jung ◽  
R. Kruszka ◽  
J. Domagala ◽  
Ania Piotrowska ◽  
...  
Keyword(s):  
Impedance Spectroscopy ◽  
Atomic Layer ◽  
Deposition Method ◽  
Heterojunction Diode ◽  
Lattice Matching ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Good Lattice ◽  
Fabrication And Characterization

ZnO as well as SiC are wide bangap materials with prospective electronic applications. Very good lattice matching of the materials allowed formation a n-ZnO/p-SiC heteroepitaxial junction. The n˗ZnO film was epitaxially grown onto the p-SiC substrate using the atomic layer deposition method. The fabricated p-n diode was studied by I-V and C-V characteristics as well as by impedance spectroscopy. The diode shows a high rectifying ratio of 107and an ideality factor of 1.21.

Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode

2010 ◽  
Vol 54 (12) ◽  
pp. 1582-1585 ◽  
Author(s):  
Ji-Hyuk Choi ◽  
Sachindra Nath Das ◽  
Kyeong-Ju Moon ◽  
Jyoti Prakash Kar ◽  
Jae-Min Myoung
Keyword(s):  
Heterojunction Diode ◽  
Si Nanowires ◽  
Zno Film ◽  
Fabrication And Characterization

Fabrication and Characterization of Polyoxometalate based Nano-hybrids: Evaluation of their role in Biological Activity

2019 ◽  
Vol 35 (4) ◽  
pp. 475-484
Author(s):  
SHIVA ARUN ◽  
◽  
PRABHA BHARTIYA ◽  
AMREEN NAZ ◽  
SUDHEER RAI ◽  
...  
Keyword(s):  
Biological Activity ◽  
Fabrication And Characterization

Fabrication and Characterization of Microcantilever for Detection of Vibration Sensation in Tactile Sensing

2019 ◽  
Vol 139 (11) ◽  
pp. 375-380
Author(s):  
Harutoshi Takahashi ◽  
Yuta Namba ◽  
Takashi Abe ◽  
Masayuki Sohgawa
Keyword(s):  
Tactile Sensing ◽  
Fabrication And Characterization
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