Unexpected behavior of transient current in thin PZT films caused by grain-boundary conduction

2017 ◽  
Vol 121 (22) ◽  
pp. 224104 ◽  
Author(s):  
L. A. Delimova ◽  
E. V. Guschina ◽  
D. S. Seregin ◽  
K. A. Vorotilov ◽  
A. S. Sigov
Keyword(s):  
Grain Boundary ◽  
Transient Current ◽  
Pzt Films ◽  
Unexpected Behavior ◽  
Boundary Conduction

Enhancement of grain-boundary conduction in gadolinia-doped ceria by the scavenging of highly resistive siliceous phase

2007 ◽  
Vol 55 (14) ◽  
pp. 4807-4815 ◽  
Author(s):  
Yoon Ho Cho ◽  
Pyeong-Seok Cho ◽  
Graeme Auchterlonie ◽  
Doo Kang Kim ◽  
Jong-Heun Lee ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Doped Ceria ◽  
Boundary Conduction

scholarly journals Dielectric anomalies due to grain boundary conduction in chemically substituted BiFeO3

2015 ◽  
Vol 117 (11) ◽  
pp. 114102 ◽  
Author(s):  
Shalini Kumari ◽  
N. Ortega ◽  
A. Kumar ◽  
S. P. Pavunny ◽  
J. W. Hubbard ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Boundary Conduction

A Study on the Selective Nucleations for Formation of Large Single Grains in PZT Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
Jang-Sik Lee ◽  
Eung-Chul Park ◽  
Jung-Ho Park ◽  
Byung-Il Lee ◽  
Seung-Ki Joo
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Perovskite Phase ◽  
Breakdown Field ◽  
Pzt Thin Films ◽  
Random Nucleation ◽  
Saturation Polarization ◽  
Pt Electrodes ◽  
Pzt Films ◽  
Pt Films

AbstractSelective nucleation and lateral growing method have been developed for high quality ferroelectric PZT(65/35) thin films using perovskite-phase PZT island seed. The PZT films on PZT seed island were transformed into the perovskite phase at temperatures as low as 540°C, which is 150°C lower than compared to that of PZT thin films deposited on Pt films. The temperature difference enables lateral growth without undesirable random nucleation. Maximum grain sizes of the perovskite-phase PZT films were determined by the annealing temperature. The PZT thin films show a leakage current density of 8×10−8 A/cm2, breakdown field of 1240 kV/cm, saturation polarization of 42 μC/cm2, and remanent polarization of 30 μC/cm2, whose values were maintained up to 2×1011 cycles. In this study, we show that when there was no grain boundary in the area measured, degradation such as fatigue and retention was not observed even with Pt electrodes. So the main source of degradation is the grain boundary in the PZT thin films.

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