scholarly journals Carrier density control and enhanced thermoelectric performance of Bi and Cu co-doped GeTe

APL Materials ◽  
2017 ◽  
Vol 5 (5) ◽  
pp. 056103 ◽  
Author(s):  
S. Shimano ◽  
Y. Tokura ◽  
Y. Taguchi
APL Materials ◽  
2019 ◽  
Vol 7 (9) ◽  
pp. 091107 ◽  
Author(s):  
A. Doi ◽  
S. Shimano ◽  
D. Inoue ◽  
T. Kikitsu ◽  
T. Hirai ◽  
...  

2021 ◽  
pp. 122754
Author(s):  
Jie Zheng ◽  
Jiali Chen ◽  
Yu Tang ◽  
Kaiyuan Shen ◽  
Baihua He ◽  
...  

2019 ◽  
Vol 7 (2) ◽  
pp. 621-631 ◽  
Author(s):  
Brenden R. Ortiz ◽  
Kiarash Gordiz ◽  
Lídia C. Gomes ◽  
Tara Braden ◽  
Jesse M. Adamczyk ◽  
...  

Phase boundary mapping in Cu2HgGeTe4allows discovery of Hg2GeTe4and further enables carrier density control over 4 orders of magnitude.


2019 ◽  
Vol 54 (12) ◽  
pp. 9049-9062 ◽  
Author(s):  
Teng Wang ◽  
Hongchao Wang ◽  
Wenbin Su ◽  
Jinze Zhai ◽  
Xue Wang ◽  
...  

2020 ◽  
Vol 9 (3) ◽  
pp. 4106-4113 ◽  
Author(s):  
Luo Yue ◽  
Wenlin Cui ◽  
Shuqi Zheng ◽  
Yue Wu ◽  
Ximeng Dong ◽  
...  

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3899 ◽  
Author(s):  
Aleksandr Yu. Kuntsevich ◽  
Victor P. Martovitskii ◽  
George V. Rybalchenko ◽  
Yuri G. Selivanov ◽  
Mikhail I. Bannikov ◽  
...  

In this study, we grew Cu co-doped single crystals of a topological superconductor candidate Sr x Bi 2 Se 3 , and studied their structural and transport properties. We reveal that the addition of even as small an amount of Cu co-dopant as 0.6 atomic %, completely suppresses superconductivity in Sr x Bi 2 Se 3 . Critical temperature (∼2.7 K) is rather robust with respect to co-doping. We show that Cu systematically increases the electron density and lattice parameters a and c. Our results demonstrate that superconductivity in Sr x Bi 2 Se 3 -based materials is induced by significantly lower Sr doping level x < 0.02 than commonly accepted x ∼ 0.06 , and it strongly depends on the specific arrangement of Sr atoms in the host matrix. The critical temperature in superconductive Sr-doped Bi 2 Se 3 is shown to be insensitive to carrier density.


2017 ◽  
Vol 5 (23) ◽  
pp. 5737-5748 ◽  
Author(s):  
Subhajit Roychowdhury ◽  
U. Sandhya Shenoy ◽  
Umesh V. Waghmare ◽  
Kanishka Biswas

Remarkable enhancement of the Seebeck coefficient of an Sn rich Sn1−xPbxTe system due to the synergistic effect of resonance level formation and valence band convergence.


2002 ◽  
Vol 372-376 ◽  
pp. 335-338 ◽  
Author(s):  
K Inomata ◽  
T Kawae ◽  
S.-J Kim ◽  
K Nakajima ◽  
T Yamashita ◽  
...  

2004 ◽  
Vol 130 (6) ◽  
pp. 391-395 ◽  
Author(s):  
Yongho Seo ◽  
Byeongho Eom ◽  
Insuk Yu ◽  
Kyoungwan Park ◽  
Seongjae Lee

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