Density of states evaluation of an insulating polymer by high-sensitivity ultraviolet photoemission spectroscopy

2017 ◽  
Vol 110 (11) ◽  
pp. 111102 ◽  
Author(s):  
T. Sato ◽  
K. R. Koswattage ◽  
Y. Nakayama ◽  
H. Ishii
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Stephan Appelfeller

AbstractThe self-organized formation of single domain Au silicide nanowires is observed on Si(110). These nanowires are analysed using scanning tunnelling microscopy (STM) and spectroscopy (STS) as well as photoemission spectroscopy (PES). Core-level PES is utilised to confirm the formation of Au silicide and establish its presence as the top most surface structure, i.e., the nanowires. The growth of the Au silicide nanowires and their dimensions are studied by STM. They form for Au coverages of about 1 monolayer and are characterized by widths of about 2 to 3 nm and heights below 1 nm while reaching lengths exceeding 500 nm when choosing appropriate annealing temperatures. Valence band PES and STS indicate a small but finite density of states at the Fermi level typical for compound metals.


RSC Advances ◽  
2016 ◽  
Vol 6 (113) ◽  
pp. 112403-112408 ◽  
Author(s):  
Menglong Zhu ◽  
Lu Lyu ◽  
Dongmei Niu ◽  
Hong Zhang ◽  
Shitan Wang ◽  
...  

The effect of a MoO3 buffer layer inserted between 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) and Co single-crystal film has been investigated using X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS).


Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 429-433 ◽  
Author(s):  
N Moslemzadeh ◽  
S.D Barrett ◽  
V.R Dhanak ◽  
G Miller

2010 ◽  
Vol 1270 ◽  
Author(s):  
Selina Olthof ◽  
Hans Kleemann ◽  
Björn Lüssem ◽  
Karl Leo

AbstractIn this paper we investigate the energetic alignment in an organic p-i-n homojunction using ultraviolet photoelectron spectroscopy. The device is made of pentacene and we emploay the small molecules NDN1 for n-doping and NDP2 for p-doping the layers. The full p-i-n structure is deposited stepwise on a silver substrate to learn about the interface dipoles and band bending effects present in the device. From the change in work function between the p- and n-doped layers we gain knowledge of the built-in potential of this junction.


2000 ◽  
Vol 253 (1) ◽  
pp. 125-131 ◽  
Author(s):  
Takafumi Kimura ◽  
Michinori Sumimoto ◽  
Shigeyoshi Sakaki ◽  
Hitoshi Fujimoto ◽  
Yukinobu Hashimoto ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document