scholarly journals Physicochemical analysis of Bi2Te3 – (Fe, Eu) – Bi2Te3 junctions grown by molecular beam epitaxy method

AIP Advances ◽  
2017 ◽  
Vol 7 (5) ◽  
pp. 056323 ◽  
Author(s):  
K. Balin ◽  
R. Rapacz ◽  
M. Weis ◽  
J. Szade
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Physicochemical Analysis ◽  
Molecular Beam Epitaxy Method

RELAXATION PROCESS OF ELECTORON-HOLE PAIRS IN Yb-DOPED AlAs/GaAs SUPERLATTICE IN HIGH MAGNETIC FIELDS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1481-1485 ◽  
Author(s):  
TADASHI TAKAMASU ◽  
KOICHI SATO
Keyword(s):  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Magnetic Fields ◽  
Relaxation Process ◽  
Molecular Beam ◽  
High Magnetic Fields ◽  
Molecular Beam Epitaxy Method ◽  
Rare Earth Doped ◽  
Photoluminescence Peak ◽  
The Rare Earth

The rare-earth doped AlAs/GaAs superlattices were grown by molecular beam epitaxy method. From the magneto-oscillation of the interband broad photoluminescence peak, electrons accumulated in the well were analyzed.

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method

2001 ◽  
Vol 43 (6) ◽  
pp. 1012-1017 ◽  
Author(s):  
B. A. Andreev ◽  
Z. F. Krasil’nik ◽  
V. P. Kuznetsov ◽  
A. O. Soldatkin ◽  
M. S. Bresler ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Method ◽  
Silicon Structures

scholarly journals Особенности роста наноструктур для терагерцовых квантово-каскадных лазеров и их физические свойства

2020 ◽  
Vol 54 (9) ◽  
pp. 902
Author(s):  
Г.Э. Цырлин ◽  
Р.Р. Резник ◽  
А.Е. Жуков ◽  
Р.А. Хабибуллин ◽  
К.В. Маремьянин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Mode ◽  
Synthesis And Characterization ◽  
Material System ◽  
Quantum Cascade ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxy Method

The data on the synthesis and characterization of structures for a quantum cascade terahertz laser in an AlGaAs/GaAs material system on GaAs substrates using the molecular beam epitaxy method are presented. The features necessary for the implementation of such structures are considered. It was shown that for this geometry almost single-mode lasing is observed at a frequency of ∼ 3 THz up to a temperature of ∼ 60 K.

scholarly journals Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method

2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Dainan Zhang ◽  
Yulong Liao ◽  
Lichuan Jin ◽  
Qi-Ye Wen ◽  
Zhiyong Zhong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Method
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