Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures

2017 ◽  
Vol 110 (9) ◽  
pp. 092410 ◽  
Author(s):  
A. Kurenkov ◽  
C. Zhang ◽  
S. DuttaGupta ◽  
S. Fukami ◽  
H. Ohno
Keyword(s):  
Size Dependence ◽  
Spin Orbit ◽  
Magnetization Switching ◽  
Device Size

Device Size Dependence of Spin-orbit Torque Induced Magnetization Switching in W/CoFeB/MgO

2017 ◽  
Author(s):  
C. Zhang ◽  
S. Fukami ◽  
S. DuttaGupta ◽  
H. Sato ◽  
H. Ohno
Keyword(s):  
Size Dependence ◽  
Spin Orbit ◽  
Magnetization Switching ◽  
Device Size

scholarly journals Magnetization switching driven by current-induced torque from weakly spin-orbit coupled Zr

2020 ◽  
Vol 2 (1) ◽  
Author(s):  
Z. C. Zheng ◽  
Q. X. Guo ◽  
D. Jo ◽  
D. Go ◽  
L. H. Wang ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Magnetization Switching

scholarly journals Magnetization switching induced by spin–orbit torque from Co2MnGa magnetic Weyl semimetal thin films

2021 ◽  
Vol 118 (6) ◽  
pp. 062402
Author(s):  
Ke Tang ◽  
Zhenchao Wen ◽  
Yong-Chang Lau ◽  
Hiroaki Sukegawa ◽  
Takeshi Seki ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Orbit ◽  
Magnetization Switching ◽  
Weyl Semimetal

scholarly journals Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejie Xie ◽  
Xiaonan Zhao ◽  
Yanan Dong ◽  
Xianlin Qu ◽  
Kun Zheng ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Domain Walls ◽  
Single Layer ◽  
Ferromagnetic Film ◽  
Effective Field ◽  
Composition Gradient ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

AbstractProgrammable magnetic field-free manipulation of perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the magnetization in a centrosymmetric single-layer ferromagnetic film cannot be switched directly by passing an electrical current in itself. Here, we demonstrate a repeatable bulk spin-orbit torque (SOT) switching of the perpendicularly magnetized CoPt alloy single-layer films by introducing a composition gradient in the thickness direction to break the inversion symmetry. Experimental results reveal that the bulk SOT-induced effective field on the domain walls leads to the domain walls motion and magnetization switching. Moreover, magnetic field-free perpendicular magnetization switching caused by SOT and its switching polarity (clockwise or counterclockwise) can be reversibly controlled in the IrMn/Co/Ru/CoPt heterojunctions based on the exchange bias and interlayer exchange coupling. This unique composition gradient approach accompanied with electrically controllable SOT magnetization switching provides a promising strategy to access energy-efficient control of memory and logic devices.

scholarly journals Ultrafast magnetization switching by spin-orbit torques

2014 ◽  
Vol 105 (21) ◽  
pp. 212402 ◽  
Author(s):  
Kevin Garello ◽  
Can Onur Avci ◽  
Ioan Mihai Miron ◽  
Manuel Baumgartner ◽  
Abhijit Ghosh ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Magnetization Switching ◽  
Ultrafast Magnetization

Spin orbit torque driven magnetization switching with sputtered Bi2Se3 spin current source

2019 ◽  
Vol 52 (22) ◽  
pp. 224001 ◽  
Author(s):  
Rajagopalan Ramaswamy ◽  
Tanmay Dutta ◽  
Shiheng Liang ◽  
Guang Yang ◽  
M S M Saifullah ◽  
...  
Keyword(s):  
Current Source ◽  
Spin Current ◽  
Spin Orbit ◽  
Magnetization Switching
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