Effects of nitrogen substitution in amorphous carbon films on electronic structure and surface reactivity studied with x-ray and ultra-violet photoelectron spectroscopies

2017 ◽  
Vol 121 (9) ◽  
pp. 095302 ◽  
Author(s):  
Yuma Murata ◽  
Rempei Nakayama ◽  
Fumihiko Ichihara ◽  
Hiroshi Ono ◽  
Cheow-Keong Choo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Amorphous Carbon ◽  
Ultra Violet ◽  
Carbon Films ◽  
Surface Reactivity ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
Nitrogen Substitution

scholarly journals Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films

2004 ◽  
Vol 85 (18) ◽  
pp. 4022-4024 ◽  
Author(s):  
S. C. Ray ◽  
C. W. Bao ◽  
H. M. Tsai ◽  
J. W. Chiou ◽  
J. C. Jan ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Amorphous Carbon ◽  
Carbon Films ◽  
Amorphous Carbon Films ◽  
Hydrogenated Amorphous Carbon ◽  
Bonding Properties ◽  
Si Doped ◽  
Structure And Bonding ◽  
Hydrogenated Amorphous

X-RAY REFLECTIVITY STUDY OF TETRAHEDRAL AMORPHOUS CARBON FILMS

2000 ◽  
Vol 14 (02n03) ◽  
pp. 181-187 ◽  
Author(s):  
B. K. Tay ◽  
X. Shi ◽  
S. P. Lau ◽  
Q. Zhang ◽  
H. C. Chua ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Amorphous Carbon ◽  
Mass Density ◽  
Ion Bombardment ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
Tetrahedral Amorphous Carbon ◽  
Bombardment Energy

Hydrogen-free amorphous carbon films were deposited at different deposition bais voltage on a single silicon wafer by a process known as Filtered Cathodic Vacuum Arc (FCVA). The influences of different deposition bias voltages on the microstructure and the properties of thin tetrahedral amorphous carbon (ta-C) films, such as surface roughness, film mass density and thickness, have been studied by means of the x-ray reflectivity technique (XRR) for the first time. The microstructure of these films deposited on silicon wafers was stimulated by a four-layer model consisting of a ta-C layer, a mixed ta-C:Si layer, Si-O layer and the silicon subtrate. The mixed ta-C:Si layer consisting of the mixture of ta-C and silicon simulates the carbon ion impinging / diffusion into the surface of the silicon substrate. The mass density and the roughness of the film are found to be dependent on the impinging ion bombardment energy. The mass density increases with increase in ion bombardment energy up to 100 eV. Beyond 100 eV, the mass density decreases with further increase in ion bombardment energy up to 100 eV. Beyond 100 EV, the mass density decreases with further increase in ion bombardment energy. The surface roughness decreases with increasing ion bambardment energy to a minimum value at 100 eV, after which it increases with further increase in ion bombardment energy. The thickness of the films obtained by XRR technique correlates well with the thickness measurement obtained by spectral reflectometry. The existence of the Si-O layer was verified by Auger depth profiling.

Voids Investigation of Amorphous Carbon Films Deposited by DC-Magnetron Sputtering: A Small Angle x-ray Scattering and Gas Thermal Effusion Study

1999 ◽  
Vol 593 ◽  
Author(s):  
F.L. Freire ◽  
L.G. Jacobsohn ◽  
D.F. Franceschini ◽  
S.S. Camargo
Keyword(s):  
Magnetron Sputtering ◽  
Amorphous Carbon ◽  
Small Angle ◽  
Ion Beam ◽  
Carbon Films ◽  
Dc Magnetron Sputtering ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

ABSTRACTAmorphous carbon films were deposited onto (100) Si crystals and onto ultra-pure Al foils by dc-magnetron sputtering with different Ar plasma pressures, from 0.17 to 1.4 Pa. We investigate the voids structure and the voids density in these films by means of small angle x-ray scattering (SAXS) and mass spectrometry of effused gases. The analysis of the effusion spectra provided clear evidence that films deposited at lower pressures are compact, while the films deposited at higher pressure present a more open structural arrangement, confirming density results obtained by using ion beam techniques. SAXS results reveal that the fraction of open volumes increases with the plasma pressure: a direct correlation between film density and open volume fraction is found. These different film microstructures could be explained by the existence of different bombarding regimes during film growth

Ultrathin undoped tetrahedral amorphous carbon films: thickness dependence of the electronic structure and implications for their electrochemical behaviour

2015 ◽  
Vol 17 (14) ◽  
pp. 9020-9031 ◽  
Author(s):  
V. S. Protopopova ◽  
N. Wester ◽  
M. A. Caro ◽  
P. G. Gabdullin ◽  
T. Palomäki ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
Electronic Structure ◽  
Physical Properties ◽  
Amorphous Carbon ◽  
Electrode Material ◽  
Electrochemical Behaviour ◽  
Computational Simulation ◽  
Carbon Films ◽  
Amorphous Carbon Films ◽  
Tetrahedral Amorphous Carbon

Complex experimental investigation of the physical properties of prospective electrode material based on Ti/ta-C bilayers in relation to their electrochemical behaviour, supported by computational simulation.

Auger-spectroscopy studies of the electronic structure of amorphous carbon films

1986 ◽  
Vol 169 (1) ◽  
pp. L253-L258
Author(s):  
V.V. Khvostov ◽  
M.B. Guseva ◽  
V.G. Babaev ◽  
O.Yu. Rylova
Keyword(s):  
Electronic Structure ◽  
Amorphous Carbon ◽  
Auger Spectroscopy ◽  
Carbon Films ◽  
Amorphous Carbon Films ◽  
Spectroscopy Studies

scholarly journals The Effect of Stress in the Density of States of Amorphous Carbon Films Determined by X-Ray Excited Auger Electron Spectroscopy

2017 ◽  
Vol 2017 ◽  
pp. 1-5 ◽  
Author(s):  
P. F. Barbieri ◽  
F. C. Marques
Keyword(s):  
Auger Electron Spectroscopy ◽  
Density Of States ◽  
Amorphous Carbon ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Carbon Films ◽  
Film Stress ◽  
Amorphous Carbon Films ◽  
X Ray

Amorphous carbon films can be prepared with a large variety of structure and have been used in a number of technological applications. Many of their properties have been determined, but very little is known concerning the effect of pressure on their properties. In this work we investigate the influence of pressure of graphite-like amorphous carbon films on the density of states (DOS) using X-ray Excited Auger Electron Spectroscopy (XAES) and the second derivate method of the XAES. The films were deposited by ion beam deposition and simultaneously bombarded with argon, which is responsible for the variation of the film stress, reaching extremely high values (4.5 GPa). Marked variations of the density of states of the pπ, pσ, sp, and s components were observed with increasing stress.

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