scholarly journals Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures

2017 ◽  
Vol 110 (8) ◽  
pp. 083905 ◽  
Author(s):  
Darius Kuciauskas ◽  
Thomas H. Myers ◽  
Teresa M. Barnes ◽  
Søren A. Jensen ◽  
Alyssa M. Allende Motz
2001 ◽  
Vol 664 ◽  
Author(s):  
Susanne von Aichberger ◽  
Frank Wünsch ◽  
Marinus Kunst

ABSTRACTContactless transient photoconductivity measurements of a-Si:H / c-Si heterojunctions are presented. It is shown that n a-Si:H / n c-Si junctions furnish an excellent passivation of the n c-Si surface. For i a-Si:H / n c-Si junctions the passivation is better for thicker films, whereas for very thin films (10 nm or less) a deviating behaviour probably due to inhomogeneities is observed. For the p a-Si:H / n c-Si junction separation of excess charge carriers in the space charge region is observed leading to a slowly decaying tail of the signal. This separation is also observed in thick i a-Si:H / n c-Si samples where electrons are injected from the a-Si:H film in the c-Si substrate.


2019 ◽  
Author(s):  
Hannes Hempel ◽  
Andrei Petsiu ◽  
Martin Stolterfoht ◽  
Pascal Becker ◽  
Dieter Neher ◽  
...  

2017 ◽  
Vol 8 (5) ◽  
Author(s):  
Michael C. Heiber ◽  
Klaus Kister ◽  
Andreas Baumann ◽  
Vladimir Dyakonov ◽  
Carsten Deibel ◽  
...  

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