scholarly journals High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

AIP Advances ◽  
2017 ◽  
Vol 7 (2) ◽  
pp. 025006 ◽  
Author(s):  
Ronan Léal ◽  
Farah Haddad ◽  
Gilles Poulain ◽  
Jean-Luc Maurice ◽  
Pere Roca i Cabarrocas
2011 ◽  
Vol 50 (4) ◽  
pp. 04DP09 ◽  
Author(s):  
Tomihisa Tachibana ◽  
Takashi Sameshima ◽  
Yuta Iwashita ◽  
Yuji Kiyota ◽  
Toyohiro Chikyow ◽  
...  

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DP09 ◽  
Author(s):  
Tomihisa Tachibana ◽  
Takashi Sameshima ◽  
Yuta Iwashita ◽  
Yuji Kiyota ◽  
Toyohiro Chikyow ◽  
...  

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