Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors

2017 ◽  
Vol 110 (7) ◽  
pp. 073102 ◽  
Author(s):  
Julian J. McMorrow ◽  
Cory D. Cress ◽  
Heather N. Arnold ◽  
Vinod K. Sangwan ◽  
Deep Jariwala ◽  
...  
Keyword(s):  
Ultraviolet Radiation ◽  
Field Effect ◽  
Radiation Effects ◽  
Vacuum Ultraviolet ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Vacuum Ultraviolet Radiation

High-energy x-ray radiation effects on the exfoliated quasi-two-dimensional β-Ga2O3 nanoflake field-effect transistors

2020 ◽  
Vol 31 (34) ◽  
pp. 345206
Author(s):  
Jin-Xin Chen ◽  
Xiao-Xi Li ◽  
Wei Huang ◽  
Zhi-Gang Ji ◽  
Su-Zhen Wu ◽  
...  
Keyword(s):  
Field Effect ◽  
Radiation Effects ◽  
Field Effect Transistors ◽  
High Energy ◽  
Two Dimensional ◽  
X Ray

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

MOF Nanosheet Reconstructed Two‐dimensional Bionic Nanochannel for Protonic Field‐effect Transistors

2021 ◽  
Author(s):  
Guo-Dong Wu ◽  
Hai-Lun Zhou ◽  
Zhi-Hua Fu ◽  
Wen-Hua Li ◽  
Jing-Wei Xiu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional
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