scholarly journals Strained GaN quantum-well FETs on single crystal bulk AlN substrates

2017 ◽  
Vol 110 (6) ◽  
pp. 063501 ◽  
Author(s):  
Meng Qi ◽  
Guowang Li ◽  
Satyaki Ganguly ◽  
Pei Zhao ◽  
Xiaodong Yan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Crystal Bulk

Vacancy and Temperature Effects on Mechanical Properties of Single-Crystal Bulk Mg2Si: A Molecular Dynamics Study

2013 ◽  
Vol 43 (6) ◽  
pp. 1668-1673 ◽  
Author(s):  
Rui Yu ◽  
Shuyong Yang ◽  
Gang Chen ◽  
Pengcheng Zhai ◽  
Lisheng Liu
Keyword(s):  
Mechanical Properties ◽  
Molecular Dynamics ◽  
Single Crystal ◽  
Temperature Effects ◽  
Crystal Bulk

scholarly journals Spin quantum well-like behavior in single-crystal Gd0.75La0.25FeO3

2020 ◽  
Author(s):  
Xin Wen ◽  
Zhigang Song ◽  
Iftikhar Ahmed Malik ◽  
Yifei Fang ◽  
Wenyun Yang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Spin Quantum

GaInAsP/InP ORGANOMETALLIC VAPOR PHASE EPITAXY FOR RESEARCH AND FABRICATION OF DEVICES

1990 ◽  
Vol 01 (03n04) ◽  
pp. 347-367 ◽  
Author(s):  
KAZUHITO FURUYA ◽  
YASUYUKI MIYAMOTO
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Vapor Phase ◽  
Optical Communication ◽  
Ballistic Transport ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Technique

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.

Cathodoluminescence nanoscopy of open single-crystal aluminum plasmonic nanocavities

Nanoscale ◽  
2018 ◽  
Vol 10 (47) ◽  
pp. 22357-22361 ◽  
Author(s):  
Li Li ◽  
Wei Cai ◽  
Chenglin Du ◽  
Zhongyuan Guan ◽  
Yinxiao Xiang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Open Triangle ◽  
Crystal Bulk

Using cathodoluminescence, the plasmonic modes of open triangle cavities patterned in single-crystal bulk aluminum are explored in deep subwavelengths from the UV to the visible, showing large Q factors.

scholarly journals AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

2003 ◽  
Vol 82 (8) ◽  
pp. 1299-1301 ◽  
Author(s):  
X. Hu ◽  
J. Deng ◽  
N. Pala ◽  
R. Gaska ◽  
M. S. Shur ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Crystal Bulk

Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities

2003 ◽  
Vol 83 (17) ◽  
pp. 3507-3509 ◽  
Author(s):  
G. Tamulaitis ◽  
I. Yilmaz ◽  
M. S. Shur ◽  
R. Gaska ◽  
C. Chen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Bulk

Growth and Characterization of Deep UV Emitter Structures Grown on Single Crystal Bulk AlN Substrates

2002 ◽  
Vol 743 ◽  
Author(s):  
X. Hu ◽  
R. Gaska ◽  
C. Chen ◽  
J. Yang ◽  
E. Kuokstis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Stimulated Emission ◽  
Localized States ◽  
Light Sources ◽  
Multiple Quantum ◽  
X Ray ◽  
Deep Uv

ABSTRACTWe report on high Al-content AlGaN-based deep UV emitter structures grown over single crystal, slightly off c-axis (5.8 degrees) bulk AlN substrates. AlN/AlGaN multiple quantum well (MQW) structures with up to 50% of Al in the well material were grown by using low-pressure MOCVD and characterized by using X-ray, AFM, SEM and photoluminescence techniques. Two light sources, one at 213 nm wavelength for selective excitation of quantum well layers and another one at 193 nm to excite both wells and barriers, were exploited. A weak temperature dependence (from 8 K to 300 K) of the luminescence intensity and the absence of blue-shift of the luminescence peak with increasing excitation intensity pointed to a low density of localized states, in a good agreement with the X-ray data, which indicated very high quality of these MQW structures.The most striking result was observation of stimulated emission at wavelength as short as 258 nm in Al0.5Ga0.5N/AlN MQWs grown on bulk AlN single crystals.

Determination of the refractive index of single crystal bulk samples and micro-structures

2011 ◽  
Vol 519 (9) ◽  
pp. 2777-2781 ◽  
Author(s):  
R. Schmidt-Grund ◽  
P. Kühne ◽  
C. Czekalla ◽  
D. Schumacher ◽  
C. Sturm ◽  
...  
Keyword(s):  
Refractive Index ◽  
Single Crystal ◽  
Micro Structures ◽  
Crystal Bulk
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