Positive bias and vacuum chamber wall effect on total electron yield measurement: A re-consideration of the sample current method

2017 ◽  
Vol 121 (7) ◽  
pp. 074902 ◽  
Author(s):  
Ming Ye ◽  
Dan Wang ◽  
Yun Li ◽  
Yong-ning He ◽  
Wan-zhao Cui ◽  
...  
Keyword(s):  
Vacuum Chamber ◽  
Current Method ◽  
Chamber Wall ◽  
Wall Effect ◽  
Positive Bias ◽  
Total Electron Yield ◽  
Total Electron ◽  
Yield Measurement ◽  
Electron Yield

Synchrotron‐radiation‐excited etching and total electron yield measurement of silicon and silicon nitride

1995 ◽  
Vol 13 (5) ◽  
pp. 2451-2455
Author(s):  
Osamu Kitamura ◽  
Shingo Terakado ◽  
Shigeo Suzuki ◽  
Masao Nakao ◽  
Tetsuji Sekitani ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Synchrotron Radiation ◽  
Total Electron Yield ◽  
Total Electron ◽  
Yield Measurement ◽  
Electron Yield

Effective escape depth of photoelectrons for hydrocarbon films in total electron yield measurement as C K-edge

1999 ◽  
Vol 6 (3) ◽  
pp. 803-804 ◽  
Author(s):  
H. Ohara ◽  
Y. Yamamoto ◽  
K. Kajikawa ◽  
H. Ishii ◽  
K. Seki ◽  
...  
Keyword(s):  
Total Electron Yield ◽  
Total Electron ◽  
Yield Measurement ◽  
Hydrocarbon Films ◽  
Escape Depth ◽  
Electron Yield

Total Electron Yield Detector Working at Low Temperature for Linear Dichroïsm Studies on Monocrystalline Samples

1997 ◽  
Vol 7 (C2) ◽  
pp. C2-325-C2-326
Author(s):  
C. Revenant-Brizard ◽  
J. R. Regnard ◽  
J. Mimault ◽  
D. Duclos ◽  
J. J. Faix
Keyword(s):  
Low Temperature ◽  
Linear Dichroism ◽  
Total Electron Yield ◽  
Total Electron ◽  
Electron Yield
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