scholarly journals Improvement of the transport properties of a high-mobility electron system by intentional parallel conduction

2017 ◽  
Vol 110 (4) ◽  
pp. 042106 ◽  
Author(s):  
S. Peters ◽  
L. Tiemann ◽  
C. Reichl ◽  
S. Fält ◽  
W. Dietsche ◽  
...  
Keyword(s):  
Transport Properties ◽  
High Mobility ◽  
Electron System ◽  
Parallel Conduction

scholarly journals Interplay of spin–orbit coupling and Coulomb interaction in ZnO-based electron system

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
D. Maryenko ◽  
M. Kawamura ◽  
A. Ernst ◽  
V. K. Dugaev ◽  
E. Ya. Sherman ◽  
...  
Keyword(s):  
Coulomb Interaction ◽  
High Mobility ◽  
Electron System ◽  
Orbit Coupling ◽  
Electron Interaction ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Strong Electron ◽  
Strongly Coupled ◽  
Dimensional Electron System

AbstractSpin–orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron–electron interaction regimes, where the single electron picture holds. However, SOC can profoundly compete against Coulomb interaction, which could lead to the emergence of unconventional electronic phases. Since SOC depends on the electric field in the crystal including contributions of itinerant electrons, electron–electron interactions can modify this coupling. Here we demonstrate the emergence of the SOC effect in a high-mobility two-dimensional electron system in a simple band structure MgZnO/ZnO semiconductor. This electron system also features strong electron–electron interaction effects. By changing the carrier density with Mg-content, we tune the SOC strength and achieve its interplay with electron–electron interaction. These systems pave a way to emergent spintronic phenomena in strong electron correlation regimes and to the formation of quasiparticles with the electron spin strongly coupled to the density.

scholarly journals Interaction effects in conductivity of a two-valley electron system in high-mobility Si inversion layers

2008 ◽  
Vol 78 (19) ◽  
Author(s):  
N. N. Klimov ◽  
D. A. Knyazev ◽  
O. E. Omel’yanovskii ◽  
V. M. Pudalov ◽  
H. Kojima ◽  
...  
Keyword(s):  
High Mobility ◽  
Electron System ◽  
Interaction Effects

INFLUENCE OF NEARBY QD LAYER ON 2DES IN QUANTUM HALL REGIME

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1445-1449
Author(s):  
K. TAKEHANA ◽  
Y. IMANAKA ◽  
T. TAKAMASU ◽  
M. HENINI
Keyword(s):  
Magnetic Field ◽  
Transport Properties ◽  
Gate Voltage ◽  
Quantum Hall ◽  
Electron System ◽  
Hall Resistance ◽  
Field Range ◽  
Voltage Range ◽  
Quantum Hall Regime ◽  
Hall Regime

We have investigated transport properties in high magnetic field of a gated two-dimensional electron system (2DES) separated by a thin barrier from a layer of self-assembled InAs quantum dots (QDs) in the quantum Hall regime. The quality of 2DES was found to be high enough to observe both integer and fractional quantum Hall effect (QHE), despite the proximity of the QD layer to the 2DES. However, significant suppression of the magnetoresistance (ρ xx ) and Hall resistance (ρ xy ) were observed in higher magnetic field range of filling factor ν < 1 when a positive voltage was applied to the front gate. The gate voltage dependence of ρ xx and ρ xy shows a well-defined hysteresis loop at the narrow gate voltage range between -0.2 and +0.2 V at ν < 1, while no anomaly was observed at ν > 1. We deduce that charging and discharging of QDs occurs when the gate voltage is varied around Vg ~ 0 V, which indicates that the electron charge states of the QDs affect the transport properties of the nearby 2DES only at ν < 1. We infer that the spin-flip process induces a non-equilibrium state in the 2DEG, which causes the suppression of ρ xx and ρ xy .

scholarly journals Behaviour of Bichromatic Microwave Induced Magnetoresistance Oscillations in the High Mobility GaAs/AlGaAs 2D electron System

2017 ◽  
Vol 864 ◽  
pp. 012055
Author(s):  
Binuka Gunawardana ◽  
Han-Chun Liu ◽  
Rasanga L. Samaraweera ◽  
C. Reichl ◽  
W Wegscheider ◽  
...  
Keyword(s):  
High Mobility ◽  
Electron System ◽  
Magnetoresistance Oscillations

Transport properties of a two-dimensional electron system at even-denominator fillings of the lowest Landau level

1992 ◽  
Vol 46 (16) ◽  
pp. 10468-10471 ◽  
Author(s):  
H. W. Jiang ◽  
L. W. Engel ◽  
D. C. Tsui ◽  
H. L. Stormer ◽  
L. N. Pfeiffer ◽  
...  
Keyword(s):  
Transport Properties ◽  
Landau Level ◽  
Electron System ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Lowest Landau Level ◽  
Dimensional Electron System
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