Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination

2017 ◽  
Vol 110 (4) ◽  
pp. 042104 ◽  
Author(s):  
Ting-Ting Kang ◽  
Yuhui Zhang ◽  
Ping-Ping Chen ◽  
ZhiHai Wang ◽  
Akio Yamamoto
Keyword(s):  
Low Temperature ◽  
Light Illumination ◽  
Weak Light

Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films

2021 ◽  
Author(s):  
Pin Tian ◽  
Hongbo Wu ◽  
Libin Tang ◽  
Jinzhong Xiang ◽  
Rongbin Ji ◽  
...  
Keyword(s):  
Large Scale ◽  
2D Materials ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Photocurrent Density ◽  
Short Wave ◽  
Oxide Semiconductor ◽  
Light Illumination ◽  
Two Dimensional ◽  
Weak Light

Abstract Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of photodetector based on 2D Bi2O2Te grown on n-Si substrate. The 2D Bi2O2Te material was transformed from sputtered Bi2Te3 ultrathin film after rapid annealing at 400 ℃ for 10 min in air atmosphere. The photodetector was capable of detecting a broad wavelength from 210 nm to 2.4 μm with excellent responsivity of up to 3x105 and 2x104 AW-1, and detectivity of 4x1015 and 2x1014 Jones at deep ultraviolet (UV) and short-wave infrared (SWIR) under weak light illumination, respectively. The effectiveness of 2D materials in weak light detection was investigated by analysis of the photocurrent density contribution. Importantly, the facile growth process with low annealing temperature would allow direct large-scale integration of the 2D Bi2O2Te materials with complementary metal-oxide–semiconductor (CMOS) technology.

scholarly journals High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

2020 ◽  
Vol 1 (1) ◽  
Author(s):  
Roda Nur ◽  
Takashi Tsuchiya ◽  
Kasidit Toprasertpong ◽  
Kazuya Terabe ◽  
Shinichi Takagi ◽  
...  
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Charge Trapping ◽  
Dual Function ◽  
Light Illumination ◽  
Low Light ◽  
High Responsivity ◽  
Metal Dichalcogenides ◽  
High Resolution Images ◽  
Weak Light ◽  
Light Signals

Abstract2D Transition Metal Dichalcogenides hold a promising potential in future optoelectronic applications due to their high photoresponsivity and tunable band structure for broadband photodetection. In imaging applications, the detection of weak light signals is crucial for creating a better contrast between bright and dark pixels in order to achieve high resolution images. The photogating effect has been previously shown to offer high light sensitivities; however, the key features required to create this as a dominating photoresponse has yet to be discussed. Here, we report high responsivity and high photogain MoS2 phototransistors based on the dual function of HfO2 as a dielectric and charge trapping layer to enhance the photogating effect. As a result, these devices offered a very large responsivity of 1.1 × 106 A W−1, a photogain >109, and a detectivity of 5.6 × 1013 Jones under low light illumination. This work offers a CMOS compatible process and technique to develop highly photosensitive phototransistors for future low-powered imaging applications.

Synthesis of Er3+/Zn2+ co-doped Bi2WO6 with highly efficient photocatalytic performance under natural indoor weak light illumination

2017 ◽  
Vol 43 (2) ◽  
pp. 2598-2605 ◽  
Author(s):  
Yuanyuan Zhang ◽  
Yongchao Ma ◽  
Qingzhi Liu ◽  
Haiyan Jiang ◽  
Qi Wang ◽  
...  
Keyword(s):  
Photocatalytic Performance ◽  
Light Illumination ◽  
Highly Efficient ◽  
Weak Light ◽  
Co Doped

scholarly journals UV Light Assisted NO2Sensing by SnO2/Graphene Oxide Composite

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 787 ◽  
Author(s):  
Hashitha M. M. Munasinghe Arachchige ◽  
Nanda Gunawardhana ◽  
Dario Zappa ◽  
Elisabetta Comini
Keyword(s):  
Graphene Oxide ◽  
Low Temperature ◽  
Metal Oxide ◽  
Uv Light ◽  
Light Illumination ◽  
Pure Sno2 ◽  
Oxide Composite ◽  
Low Concentrations ◽  
Sno2 Nanowires ◽  
Metal Oxide Gas Sensors

Nitric oxide (NO2) is one of the air pollutants that pose serious environmental concerns over the years. In this study, SnO2 nanowires were synthesized by evaporation-condensation method and graphene oxide were synthesized using modified Hummers method for low temperature NO2 detection. Drop cast method was used to transfer graphene oxide (GO), to form composite GO-metal oxide p-n junctions. With integration of reduce graphene oxide (rGO), the UV light absorption was enhanced. This metal oxide composite has shown a reversible response in detecting low concentrations of NO2 under UV irradiation, with a working temperature range of 50–150 °C. Pure SnO2 shows 20% response to NO2 (4 ppm) in dark conditions, while the response increasesupto60%usingUVirradiationat50°C.Furthermore, SnO2/rGOshowsa40%ofresponse in dark, while the response increases to 160% under UV light illumination. This composite exhibits excellent recovery and maintains the baseline under UV light at low temperatures, which effectively overcome the drawbacks of low recovery typically shown by metal oxide gas sensors at low temperature.

ROOTSTOCK SCREENING FOR TOLERANCE TO LOW TEMPERATURE, WEAK LIGHT AND SALT STRESS IN CUCUMBER

2015 ◽  
pp. 167-176 ◽  
Author(s):  
Y. Li ◽  
X.M. Tian ◽  
M. Wei ◽  
X.F. Wang ◽  
Q.H. Shi ◽  
...  
Keyword(s):  
Salt Stress ◽  
Low Temperature ◽  
Weak Light

Fabrication and Photoelectrical Properties of AZO/SiO2/p-Si Based Device

2008 ◽  
Vol 1123 ◽  
Author(s):  
Z.Q. Ma ◽  
B. He ◽  
J. Xu ◽  
L. Zhao ◽  
F. Li ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Zno Films ◽  
Light Illumination ◽  
Radio Frequency Magnetron Sputtering ◽  
Voltage Measurement ◽  
Photoelectrical Properties ◽  
Tunneling Diode ◽  
Current Voltage ◽  
Heterojunction Device ◽  
Weak Light

AbstractIn order to fabricate AZO/SiO2/p-Si heterojunction device and let it be an absorber of ultraviolet response cell. Zinc oxide (ZnO) thin films doped with aluminum (AZO) were deposited on p-Si(100) substrates covered with silicon dioxide (SiO2) by radio frequency magnetron sputtering. The optical and electrical properties of the Al doped - ZnO films were characterized by UV-VIS spectrophotometer, current-voltage measurement, and four point probe technique, respectively. The results show that the device is a typical tunneling diode for minority carrier and a strong obstructing effect from majority carriers. The potential rectifying behavior and photovoltaic characteristic is present at dark current and weak light illumination, respectively.

scholarly journals Responses of the Hybrid between Sphagneticola trilobata and Sphagneticola calendulacea to Low Temperature and Weak Light Characteristic in South China

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Zhongyu Sun ◽  
Yanqiao Chen ◽  
Valentin Schaefer ◽  
Huimiao Liang ◽  
Weihua Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
South China ◽  
Weak Light ◽  
Sphagneticola Calendulacea

scholarly journals Substrate Application of 5-Aminolevulinic Acid Enhanced Low-temperature and Weak-light Stress Tolerance in Cucumber (Cucumis sativus L.)

Agronomy ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 472 ◽  
Author(s):  
Ali Anwar ◽  
Jun Wang ◽  
Xianchang Yu ◽  
Chaoxing He ◽  
Yansu Li
Keyword(s):  
Low Temperature ◽  
Stress Tolerance ◽  
Antioxidant Enzyme ◽  
Aminolevulinic Acid ◽  
Light Stress ◽  
Photochemical Quenching ◽  
Antioxidant Enzyme Activities ◽  
Cucumber Seedlings ◽  
Chl A ◽  
Weak Light

5-Aminolevulinic acid (ALA) is a type of nonprotein amino acid that promotes plant stress tolerance. However, the underlying physiological and biochemical mechanisms are not fully understood. We investigated the role of ALA in low-temperature and weak-light stress tolerance in cucumber seedlings. Seedlings grown in different ALA treatments (0, 10, 20, or 30 mg ALA·kg−1 added to substrate) were exposed to low temperature (16/8 ˚C light/dark) and weak light (180 μmol·m−2·s−1 photosynthetically active radiation) for two weeks. Treatment with ALA significantly alleviated the inhibition of plant growth, and enhanced leaf area, and fresh and dry weight of the seedlings under low-temperature and weak-light stress. Moreover, ALA increased chlorophyll (Chl) a, Chl b, and Chl a+b contents. Net photosynthesis rate, stomatal conductance, transpiration rate, photochemical quenching, non-photochemical quenching, actual photochemical efficiency of photosystem II, and electron transport rate were significantly increased in ALA-treated seedlings. In addition, ALA increased root activity and antioxidant enzyme (superoxide dismutase, peroxidase, and catalase) activities, and reduced reactive oxygen species (hydrogen peroxide and superoxide radical) and malondialdehyde accumulation in the root and leaf of cucumber seedlings. These findings suggested that ALA incorporation in the substrate alleviated the adverse effects of low-temperature and weak-light stress, and improved Chl contents, photosynthetic capacity, and antioxidant enzyme activities, and thus enhanced cucumber seedling growth.

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