scholarly journals Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

2017 ◽  
Vol 121 (4) ◽  
pp. 044504 ◽  
Author(s):  
Y. Li ◽  
G. I. Ng ◽  
S. Arulkumaran ◽  
G. Ye ◽  
Z. H. Liu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors

2002 ◽  
Vol 41 (Part 1, No. 8) ◽  
pp. 5125-5126 ◽  
Author(s):  
Shinya Mizuno ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Koichi Maezawa ◽  
Takashi Mizutani
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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