scholarly journals Oxygen partial pressure induced effects on the microstructure and the luminescence properties of pulsed laser deposited TiO2 thin films

AIP Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 015021 ◽  
Author(s):  
A. K. Kunti ◽  
K. C. Sekhar ◽  
Mario Pereira ◽  
M. J. M. Gomes ◽  
S. K. Sharma
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Luminescence Properties ◽  
Tio2 Thin Films

Pulsed Laser Deposited Oxide Green Emitting Thin Film Phosphors : Optimization of Growth Conditions

2006 ◽  
Vol 988 ◽  
Author(s):  
P. Thiyagarajan ◽  
M. Kottaismay ◽  
M S Ramachandra Rao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Diffuse Reflectance Spectroscopy ◽  
Quartz Substrate ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Ex Situ ◽  
Morphological Studies

AbstractStructural and photoluminescence (PL) properties of Zn2(1-x)MnxSiO4 (1 ≤ x ≤ 5) and diffuse reflectance spectroscopy (DRS) and morphological studies of ZnGa2O4:Mn thin film green emitting phosphors grown using pulsed laser deposition (PLD) technique have been investigated. Zn2(1-x)MnxSiO4 thin films grown on Si substrate at 700°C in 300 mTorr of oxygen partial pressure, upon ex-situ annealing at higher temperatures exhibit superior PL intensity. ZnGa2O4:Mn phosphor thin films grown on quartz substrate at 650oC and in-situ annealed in 300mTorr of oxygen partial pressure show better emission intensity. For both Zn2SiO4:Mn and ZnGa2O4:Mn phosphors, luminescence can be assigned to 4T1 – 6A1 transition of Mn2+ within the 3d orbital giving rise to emission at 525 and 503 nm, respectively.

Influence of oxygen partial pressure on the properties of pulsed laser deposited nanocrystalline zirconia thin films

2011 ◽  
Vol 257 (20) ◽  
pp. 8506-8510 ◽  
Author(s):  
G. Balakrishnan ◽  
T.N. Sairam ◽  
P. Kuppusami ◽  
R. Thiumurugesan ◽  
E. Mohandas ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Nanocrystalline Zirconia

Effect of oxygen partial pressure on the structural and optical properties of ion beam sputtered TiO2 thin films

2016 ◽  
Vol 619 ◽  
pp. 86-90 ◽  
Author(s):  
Firdous A. Tantray ◽  
Arpana Agrawal ◽  
Mukul Gupta ◽  
Joseph T. Andrews ◽  
Pratima Sen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
Structural And Optical Properties ◽  
Tio2 Thin Films ◽  
Effect Of Oxygen

scholarly journals Influence of the oxygen partial pressure on the growth and optical properties of RF-sputtered anatase TiO2 thin films

2017 ◽  
Vol 7 ◽  
pp. 3349-3352 ◽  
Author(s):  
A.R. Grayeli Korpi ◽  
Sahare Rezaee ◽  
C. Luna ◽  
Ş. Ţălu ◽  
A. Arman ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Anatase Tio2 ◽  
Tio2 Thin Films

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

IMPROVEMENT OF THE SURFACE ROUGHNESS OF LaAlO3 SUBSTRATE BY DEPOSITING ANOTHER LAYER OF LaAlO3

1993 ◽  
Vol 07 (11) ◽  
pp. 743-746
Author(s):  
YONGJUN TIAN ◽  
HUIBIN LU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
ZHENHAO CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Laser Ablation ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Surface Profiles ◽  
Deposited Films

LaAlO 3 thin films have been deposited on (100) LaAlO 3 substrates by pulsed laser ablation. The deposited films showed the (h00) preferential orientations. Surface profiles indicated that the surface roughness of the films decreased with the increase of the oxygen partial pressure. High quality superconducting YBa 2 Cu 3 O 7 thin films have been successfully deposited by laser ablation on the (100) LaAlO 3 substrates with the LaAlO 3 layers.

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