scholarly journals Fermi-level pinning of bilayer graphene with defects under an external electric field

2017 ◽  
Vol 110 (1) ◽  
pp. 011601 ◽  
Author(s):  
Ken Kishimoto ◽  
Susumu Okada
Keyword(s):  
Electric Field ◽  
Fermi Level ◽  
External Electric Field ◽  
Bilayer Graphene ◽  
Fermi Level Pinning

scholarly journals Electronic Properties of Bilayer Graphene Strongly Coupled to Interlayer Stacking and an External Electric Field

2015 ◽  
Vol 115 (1) ◽  
Author(s):  
Changwon Park ◽  
Junga Ryou ◽  
Suklyun Hong ◽  
Bobby G. Sumpter ◽  
Gunn Kim ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Bilayer Graphene ◽  
Strongly Coupled

Twist in the Tale: Exploring the Dielectric Screening Effect in Twisted Bilayer Graphene

2022 ◽  
Vol 2 ◽  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Electronic States ◽  
Bilayer Graphene ◽  
Two Dimensional ◽  
Screening Effect ◽  
Dielectric Screening ◽  
Twisted Bilayer Graphene

Although the screening of an external electric field, strongly influences the electronic states of two-dimensional material stack, it is not well understood. Magnetotransport measurements of twisted double bilayer graphene uncovered the screening of atomic layers.

scholarly journals Tuning Electronic Properties of the SiC-GeC Bilayer by External Electric Field: A First-Principles Study

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 309
Author(s):  
Min Luo ◽  
Bin Yu ◽  
Yu-e Xu
Keyword(s):  
Band Structure ◽  
Electric Field ◽  
Fermi Level ◽  
Electronic Properties ◽  
External Electric Field ◽  
Valence Band ◽  
Conduction Band ◽  
First Principles ◽  
First Principles Calculations ◽  
Direct Bandgap

First-principles calculations were used to investigate the electronic properties of the SiC/GeC nanosheet (the thickness was about 8 Å). With no electric field (E-field), the SiC/GeC nanosheet was shown to have a direct bandgap of 1.90 eV. In the band structure, the valence band of the SiC/GeC nanosheet was mainly made up of C-p, while the conduction band was mainly made up of C-p, Si-p, and Ge-p, respectively. Application of the E-field to the SiC/GeC nanosheet was found to facilitate modulation of the bandgap, regularly reducing it to zero, which was linked to the direction and strength of the E-field. The major bandgap modulation was attributed to the migration of C-p, Si-p, and Ge-p orbitals around the Fermi level. Our conclusions might give some theoretical guidance for the development and application of the SiC/GeC nanosheet.

Surface Fermi level pinning in epitaxial InSb studied by electric‐field‐induced Raman scattering

1993 ◽  
Vol 63 (3) ◽  
pp. 349-351 ◽  
Author(s):  
J. Wagner ◽  
A.‐L. Alvarez ◽  
J. Schmitz ◽  
J. D. Ralston ◽  
P. Koidl
Keyword(s):  
Electric Field ◽  
Raman Scattering ◽  
Fermi Level ◽  
Fermi Level Pinning ◽  
Surface Fermi Level

scholarly journals Electric Field Induced Twisted Bilayer Graphene Infrared Plasmon Spectrum

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2433
Author(s):  
Jizhe Song ◽  
Zhongyuan Zhang ◽  
Naixing Feng ◽  
Jingang Wang
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Valence Band ◽  
Conduction Band ◽  
Bilayer Graphene ◽  
Physical Mechanisms ◽  
Conduction Bands ◽  
Twisted Bilayer Graphene ◽  
The Difference ◽  
Plasmon Spectrum

In this work, we investigate the role of an external electric field in modulating the spectrum and electronic structure behavior of twisted bilayer graphene (TBG) and its physical mechanisms. Through theoretical studies, it is found that the external electric field can drive the relative positions of the conduction band and valence band to some extent. The difference of electric field strength and direction can reduce the original conduction band, and through the Fermi energy level, the band is significantly influenced by the tunable electric field and also increases the density of states of the valence band passing through the Fermi level. Under these two effects, the valence and conduction bands can alternately fold, causing drastic changes in spectrum behavior. In turn, the plasmon spectrum of TBG varies from semiconductor to metal. The dielectric function of TBG can exhibit plasmon resonance in a certain range of infrared.

scholarly journals Outstanding Tunable Electrical And Optical Characteristics In Monolayer Silicene At high Terahertz Frequencies

2021 ◽  
Author(s):  
Hamed Emami Nejad ◽  
Ali Mir ◽  
Ali Farmani ◽  
Reza Talebzadeh
Keyword(s):  
Electric Field ◽  
Fermi Level ◽  
External Electric Field ◽  
Carrier Mobility ◽  
Tight Binding ◽  
Optical Characteristics ◽  
Binding Model ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Terahertz Frequencies

Abstract Silicene, a zero-gap semi-metallic advanced material, has received much attention due to its extraordinary electronic and optical characteristics, which could be used in plasmonics nano-devices. This material presenting as a tunable material without degrading its high carrier mobility. By applying the rigorous numerical techniques, the optical and electrical properties of silicene at high terahertz frequencies are calculated here. Beneath the influence of environmental effects such as the Fermi level, temperature, and external electric field, on the optical conductivity and refractive index of silicene are investigated using the tight-binding model. The effect of Fermi level from zero to 1 eV, external electric field from zero to 2.5 eV, and temperature from 5 to 400 K are investigated on the optical properties of silicene. One of the interesting features of Silicene is its adjustable bandgap, which we are present here.

Continuous Fermi level tuning of Nb-doped WSe2 under an external electric field

2021 ◽  
Author(s):  
Kaoru Hisama ◽  
Yanlin Gao ◽  
Mina Maruyama ◽  
Ryo KITAURA ◽  
Susumu Okada
Keyword(s):  
Electric Field ◽  
Fermi Level ◽  
External Electric Field
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