High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

2016 ◽  
Vol 109 (23) ◽  
pp. 232106 ◽  
Author(s):  
Taizoh Sadoh ◽  
Yuki Kai ◽  
Ryo Matsumura ◽  
Kenta Moto ◽  
Masanobu Miyao
Keyword(s):  
Low Temperature ◽  
Carrier Mobility ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
High Carrier Mobility ◽  
High Carrier

scholarly journals Four-step heating process for solid-phase crystallization of Ge leading to high carrier mobility

2020 ◽  
Vol 13 (10) ◽  
pp. 101005
Author(s):  
Takuto Mizoguchi ◽  
Toshifumi Imajo ◽  
Takashi Suemasu ◽  
Kaoru Toko
Keyword(s):  
Carrier Mobility ◽  
Solid Phase ◽  
Heating Process ◽  
Solid Phase Crystallization ◽  
Step Heating ◽  
High Carrier Mobility ◽  
High Carrier

Dual-source vapor-processed blue-emissive cesium copper iodine microplatelets with high crystallinity and stability

2021 ◽  
Author(s):  
Jingjing Yan ◽  
Jingli Ma ◽  
Mengyao Zhang ◽  
Ruoting Yang ◽  
Xu Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Mobility ◽  
Processing Technique ◽  
Tunable Bandgap ◽  
Low Temperature Processing ◽  
Dual Source ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Halide Perovskites ◽  
Lead Halide

Recently, hybrid lead-halide perovskites have attracted extensive attention because of their unique optoelectronic characteristics, such as ambipolar charge transport, tunable bandgap, high carrier mobility, low-temperature processing technique, and so on....

Low temperature plasma processing of nc-Si/a-SiNx:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells

RSC Advances ◽  
2014 ◽  
Vol 4 (70) ◽  
pp. 36929-36939 ◽  
Author(s):  
Basudeb Sain ◽  
Debajyoti Das
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
Crystal Orientation ◽  
Carrier Mobility ◽  
Third Generation ◽  
Temperature Plasma ◽  
High Carrier Mobility ◽  
High Carrier

The nc-Si-QDs/a-SiNx:H (∼5.7–1.3 nm) thin-films grown by low-temperature Inductively-coupled plasma, possess high carrier-mobility, electrical-conductivity, photosensitivity and preferred (220) crystal orientation, suitable for third-generation solar cells.

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