Electrical properties ofp-ZnTe/n+-GaAs junctions grown at different Te/Zn beam equivalent pressure ratios by molecular beam epitaxy
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1995 ◽
Vol 34
(Part 1, No. 9A)
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pp. 4593-4598
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2001 ◽
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pp. 250-254
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Vol 110
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pp. 910-914
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pp. 1912
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2017 ◽
Vol 17
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pp. 327-332
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