RF-MEMS tunable interdigitated capacitor and fixed spiral inductor for band pass filter applications

2016 ◽  
Author(s):  
Ladon Ahmed Bade ◽  
John Ojur Dennis ◽  
M. Haris Md Khir ◽  
Wong Peng Wen
Electronics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 195 ◽  
Author(s):  
Ki-Hun Lee ◽  
Eun-Seong Kim ◽  
Jun-Ge Liang ◽  
Nam-Young Kim

In this study, the proposed bandpass filter (BPF) connects an interdigital and a spiral capacitor in series between the two symmetrical halves of a circular intertwined spiral inductor. For the mass production of devices and to achieve a higher accuracy and a better performance compared with other passive technologies, we used integrated passive device (IPD) technology. IPD has been widely used to realize compact BPFs and achieve the abovementioned. The center frequency of the proposed BPF is 1.96 GHz, and the return loss, insertion loss and transmission zero are 26.77 dB, 0.27 dB and 38.12 dB, respectively. The overall dimensions of BPFs manufactured using IPD technology are 984 × 800 μ m 2 , which is advantageous for miniaturization and integration.


Author(s):  
Souradip Hore ◽  
Santanu Maity ◽  
Jyoti Sarma ◽  
Anwesha Choudhury ◽  
Gaurav Yadav

2011 ◽  
Vol 23 ◽  
pp. 233-247 ◽  
Author(s):  
Shimul Chandra Saha ◽  
Ulrik Hanke ◽  
Hakon Sagberg ◽  
Tor A. Fjeldly ◽  
Trond Saether

2019 ◽  
Vol 28 (13) ◽  
pp. 1950225
Author(s):  
C. L. Palson ◽  
D. D. Krishna ◽  
B. R. Jose ◽  
J. Mathew ◽  
M. Ottavi

Memristors have been recently proposed as an alternative to incorporate switching along with traditional CMOS circuits. Adaptive impedance and frequency tuning are an essential and challenging aspect in communication system design. To enable both, a matching network based on switchable capacitors with fixed inductors is proposed in this paper where the switching is done by memristive switches. This paper analyzes the operation of memristors as a switch and a matching network based on memristors which adaptively tunes with impedance and frequency. With three capacitor banks of each 0.5 pF resolution and two fixed inductors, matching for antenna impedance ranging from 20 to 200[Formula: see text]Ohms and for frequencies ranging from 0.9 to 3.2[Formula: see text]GHz is reported. Thereafter, an adaptive planar band-pass filter is implemented on CMOS technology with two metal layers. This adaptive frequency tunable band-pass filter uses a [Formula: see text] network with resonator tanks in both arms that operates at 2.45 GHz. It is tunable from 2.8[Formula: see text]GHz to 7.625[Formula: see text]GHz range. This tunability is achieved using tunable spiral inductor based on memristive switches. The proposed filter layout is implemented and simulated in ANSYS Designer. The initialization and the programming circuitry to enable adaptive switching of the memristive devices has to be addressed. Since RF memristive devices are not commercially available, circuit level simulations are done as a proof of concept to validate the expected results.


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