Characterization of a seeded pulsed molecular beam using the velocity map imaging technique

2016 ◽  
Author(s):  
Aude Lietard ◽  
Lionel Poisson ◽  
Jean-Michel Mestdagh ◽  
Marc-André Gaveau
Keyword(s):  
Molecular Beam ◽  
Imaging Technique ◽  
Velocity Map Imaging

scholarly journals Single-shot imaging of surface molecular ionization in nanosystems

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Fenghao Sun ◽  
Hui Li ◽  
Shanshan Song ◽  
Fei Chen ◽  
Jiawei Wang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Strong Field ◽  
Imaging Technique ◽  
Near Field ◽  
Velocity Map Imaging ◽  
Single Shot ◽  
Surface Molecules ◽  
Nanoparticle Interactions ◽  
Field Response ◽  
Ion Species

Abstract Using single-shot velocity map imaging technique, explosion imaging of different ion species ejected from 50 nm SiO2 nanoparticles are obtained excitedly by strong near-infrared and ultraviolet femtosecond laser fields. Characteristic momentum distributions showing forward emission of the ions at low excitation intensities and shock wave behaviors at high intensities are observed. When the excitation intensity is close to the dissociative ionization threshold of the surface molecules, the resulting ion products can be used to image the instant near-field distributions. The underlying dynamics of shock formation are simulated by using a Coulomb explosion model. Our results allow one to distinguish the ultrafast strong-field response of various molecular species in nanosystems and will open a new way for further exploration of the underlying dynamics of laser-and-nanoparticle interactions.

In situ characterization of a cold and short pulsed molecular beam by femtosecond ion imaging

2009 ◽  
Vol 11 (20) ◽  
pp. 3958 ◽  
Author(s):  
Daniel Irimia ◽  
Rob Kortekaas ◽  
Maurice H. M. Janssen
Keyword(s):  
Molecular Beam ◽  
Ion Imaging ◽  
In Situ Characterization

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

2017 ◽  
Vol 9 (36) ◽  
pp. 30786-30796 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Dong-Hyeok Lim ◽  
Jae-Hun Jeong ◽  
Dambi Park ◽  
Kwang-Sik Jeong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area

scholarly journals Gas‐source molecular‐beam epitaxy using Si2H6and GeH4and x‐ray characterization of Si1−xGex(0≤x≤0.33) alloys

1992 ◽  
Vol 71 (10) ◽  
pp. 4916-4919 ◽  
Author(s):  
S. H. Li ◽  
S. W. Chung ◽  
J. K. Rhee ◽  
P. K. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray ◽  
Gas Source
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