Low temperature conduction-band transport in diamond

2016 ◽  
Vol 109 (16) ◽  
pp. 162106 ◽  
Author(s):  
S. Majdi ◽  
M. Gabrysch ◽  
K. K. Kovi ◽  
N. Suntornwipat ◽  
I. Friel ◽  
...  
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Temperature Conduction

Study on Low Temperature Conduction Mechanism of Al Doped ZnO/SiO2/ P-Si Heterojunction

2021 ◽  
Vol 904 ◽  
pp. 363-368
Author(s):  
Xiao Yan Zhou ◽  
Bang Sheng Yin
Keyword(s):  
Activation Energy ◽  
Impedance Spectroscopy ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Ac Conductivity ◽  
Spray Pyrolysis Method ◽  
Temperature Conductivity ◽  
Calculated Activation Energy ◽  
Doped Zno ◽  
Temperature Conduction

The 3 at% Al doped ZnO thin films were deposited on p-Si substrate with a native SiO2 layer by spray pyrolysis method. Low temperature conduction behaviors were studied by analysis of impedance spectroscopy and low temperature ac conductivity. The results of impedance spectroscopy showed that the grain boundaries contributed to the resistivity of Al doped ZnO/SiO2/p-Si heterojunction. The calculated activation energy was 0.073 eV for grain boundaries. The equivalent circuit to demonstrate the electrical properties of Al doped ZnO/SiO2/p-Si heterojunction was a series connection of two parallel combination circuits of a resistor and a universal capacitor. Low temperature ac conductivity measurements indicated that the conductivity increased with temperature. Low temperature conductivity mechanism was electron conductivity, and the activation energy was 0.086 eV.

Low-temperature occupation of a donor state resonant with the conduction band inAl0.35Ga0.65As

1993 ◽  
Vol 48 (24) ◽  
pp. 17835-17840 ◽  
Author(s):  
A. Baraldi ◽  
F. Colonna ◽  
P. Frigeri ◽  
C. Ghezzi ◽  
A. Parisini ◽  
...  
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Donor State

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

2020 ◽  
Vol 1004 ◽  
pp. 231-236
Author(s):  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Alexander A. Lebedev ◽  
Jana Toompuu ◽  
Natalja Sleptsuk
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Electron Irradiation ◽  
Proton Irradiation ◽  
Schottky Diodes ◽  
Differential Resistance ◽  
Charge Carriers ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
Comparative Results

The influence of low-temperature (up to 400°С) annealing on the current-voltage and capacitance–voltage characteristics of Schottky diodes irradiated with protons with an energy of 15 MeV compared with the results of annealing of structures after irradiation with electrons with an energy of 0.9 MeV has been studied. It was shown that in case of proton irradiation with a dose of 4E13 cm-2 and electron irradiation with a dose of 1E16 cm-2, only partial carrier compensation occurs and the differential resistance is completely determined by the number of carriers in the epitaxial layer. The irradiation method has almost no effect on the direct current dependence on the voltage in the exponential segment. The ideality coefficient remains almost unchanged within 1.03 ÷ 1.04. During annealing after proton irradiation, a large activation energy of the process is required. The temperature of the beginning of annealing process during proton irradiation shifts to a larger value, from 150 °C to 250 °C when compared with electron irradiation. It has been demonstrated that at low doses of proton irradiation, the low-temperature annealing leads to the return to the conduction band of up to 65% of the removed charge carriers. After electron irradiation, low-temperature annealing returns up to 90% of the removed charge carriers to the conduction band. This indicates that at room temperature both proton irradiation as well as electron irradiation introduce both stable and unstable defects but in different proportions.

Low temperature conduction in GdBa2Cu3Oy(y<6.4) films

1989 ◽  
Vol 161 (4) ◽  
pp. 447-450 ◽  
Author(s):  
Y. Ochiai ◽  
F. Nakamura ◽  
K. Senoh ◽  
T. Tamura ◽  
T. Terashima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Conduction

Photoluminescence of ZnO:Eu3+ Nanoflowers

2008 ◽  
Vol 8 (3) ◽  
pp. 1307-1311 ◽  
Author(s):  
Peter A. Tanner ◽  
Lixin Yu
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Selective Excitation ◽  
Ftir Spectra ◽  
Photoluminescence Spectra ◽  
Defect States ◽  
Hydrothermal Route ◽  
Broadband Emission ◽  
The Eu

The synthesis of ZnO:Eu3+ nanoflowers by a low-temperature hydrothermal route is described. Characterization of the materials was performed by ESEM, XRD and FTIR spectra. The 355 nm excited photoluminescence spectra at 10 K do not indicate the presence of Eu2+ or the ZnO defect states which give rise to green or red broadband emission. Excitation into the ZnO conduction band at low temperature does not give emission from Eu3+. Selective excitation of the Eu3+ emission shows that Eu3+ ions occupy a variety of different sites, of which one of them is similar to Eu3+ in C-type Eu2O3.

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