Note: Electro-optic coefficients of Li-deficient MgO-doped LiNbO3 crystal

2016 ◽  
Vol 87 (9) ◽  
pp. 096105 ◽  
Author(s):  
Wan-Ying Du ◽  
Zi-Bo Zhang ◽  
Shuai Ren ◽  
Wing-Han Wong ◽  
Dao-Yin Yu ◽  
...  
Keyword(s):  
2011 ◽  
Vol 201-203 ◽  
pp. 1590-1595
Author(s):  
Mu Zhun Zhou ◽  
Yan Ru Chen ◽  
Qi Zhao ◽  
Yu Xin

Principle of polarization encoding based on electro-optic effect of LiNbO3 crystal is analyzed, effact on polarization encoding optical field effects is studied when the incident light direction changes. Theoretical calculations show that, with the angle between the direction of incident laser beam and the main axis of LiNbO3 crystal increases, rotation angle of polarization ellipse remain unchanged,but ellipticity changes at any other position except in the center of the encoder,at the top and bottom of encoder,polarization state changes from circularly polarized to elliptically polarized,at other position of the encoder, polarization states are still elliptically polarized light but with different ellipticity angle. Experiment measurement results are in accord with ones of the calculation.


2021 ◽  
Author(s):  
Alexander Shugurov ◽  
Sergey Bodrov ◽  
Evgeny Mashkovich ◽  
Hideaki Kitahara ◽  
Nikita Abramovsky ◽  
...  

2010 ◽  
Vol 42 (4) ◽  
pp. 546-551 ◽  
Author(s):  
Xiaona Yan ◽  
Hua Zou ◽  
Xihua Yang ◽  
Huifang Zhang ◽  
Yan Wang

1999 ◽  
Author(s):  
Abdalla M. Darwish ◽  
Eric K. Williams ◽  
Dariush Ila ◽  
David B. Poker ◽  
Dale K. Hensley

Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.


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