scholarly journals Broadband light absorption of silicon nanowires embedded in Ag nano-hole arrays

AIP Advances ◽  
2016 ◽  
Vol 6 (9) ◽  
pp. 095216 ◽  
Author(s):  
Lei Rao ◽  
Chun-Lei Ji ◽  
Ming Li
Keyword(s):  
Silicon Nanowires ◽  
Light Absorption ◽  
Hole Arrays

scholarly journals Improving Absorption in Single Silicon Nanowires by Symmetry-breaking Design from Square to Rectangular Cross-section

2021 ◽  
Author(s):  
Wenfu Liu
Keyword(s):  
Symmetry Breaking ◽  
Silicon Nanowires ◽  
Light Absorption ◽  
High Efficiency ◽  
Rectangular Cross Section ◽  
Photovoltaic Devices ◽  
Vertical Side ◽  
Photovoltaic Applications ◽  
Single Nanowires ◽  
Horizontal Side

Light absorption in single nanowires (NWs) is one of the most crucial factors for photovoltaic applications. In this paper, we carried out a detailed investigation of light absorption in single rectangular NWs (RNWs). We show that the RNWs exhibit improved light absorption compared with the square NWs (SNWs), which can be attributed to the symmetry-breaking structure that can increase the light path length by increasing the vertical side and the enhanced leaky mode resonances (LMRs) by decreasing the horizontal side. We found that the light absorption in silicon RNWs can be enhanced by engineering the horizontal and vertical sides, the photocurrent is significantly increased by 276.5% or 82.9% compared with that of the SNWs with the same side length as the horizontal side of 100 nm or the vertical side of 1000 nm, respectively. This work provides an effective way for designing high-efficiency single NW photovoltaic devices based on the symmetry breaking from the SNWs to RNWs.

Finite-Difference Time-Domain Algorithm for Quantifying Light Absorption in Silicon Nanowires

2012 ◽  
Vol 52 (11-12) ◽  
pp. 1027-1036 ◽  
Author(s):  
Ho-Seok Ee ◽  
Kyung-Deok Song ◽  
Sun-Kyung Kim ◽  
Hong-Gyu Park
Keyword(s):  
Finite Difference ◽  
Time Domain ◽  
Silicon Nanowires ◽  
Light Absorption ◽  
Finite Difference Time Domain ◽  
Difference Time

scholarly journals Two-Dimensional Modeling of Silicon Nanowires Radial Core-Shell Solar Cells

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Qiang Zeng ◽  
Na Meng ◽  
Yulong Ma ◽  
Han Gu ◽  
Jing Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nanowires ◽  
Light Absorption ◽  
Low Cost ◽  
Light Trapping ◽  
Electrical Performance ◽  
Core Shell ◽  
Two Dimensional ◽  
Strong Light ◽  
The Impact

Silicon nanowires radial core-shell solar cells have recently attracted significant attention as promising candidates for low cost photovoltaic application, benefit from its strong light trapping, and short radial carrier collection distances. In order to establish optics and electricity improvement, a two-dimensional model based on Shockley-Read-Hall recombination modes has been carried out for radial core-shell junction nanowires solar cell combined with guided resonance modes of light absorption. The impact of SiNWs diameter and absorption layer thickness on device electrical performance based on a fixed nanowires height and diameter-over-periodicity were investigated under illumination. The variation in quantum efficiency indicated that the performance is limited by the mismatch between light absorption and carriers’ collection length.

Plasmon-assisted interaction of Si with light, for cancer hyperthermia and electromagnetic energy harvest

2020 ◽  
Vol 92 (2) ◽  
pp. 20101
Author(s):  
Behnam Kheyraddini Mousavi ◽  
Morteza Rezaei Talarposhti ◽  
Farshid Karbassian ◽  
Arash Kheyraddini Mousavi
Keyword(s):  
Silicon Nanowires ◽  
Metallic Nanoparticles ◽  
Near Infrared ◽  
Optical Transition ◽  
Electromagnetic Energy ◽  
Energy Harvest ◽  
Absorption Enhancement ◽  
Ir Absorption ◽  
Absorption Mechanism ◽  
Near Ir

Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making SiNWs semi-transparent in near-infrared (IR). For the first time, by treating the fabricated SiNWs with copper containing HF∕H2O2∕H2O solution, we have generated crystalline nanowires with broader light absorption spectrum, up to λ = 1 μm. Both the absorption and photo-luminescence (PL) of the SiNWs are observed from visible to IR wavelengths. It is found that the SiNWs have PL at visible and near Infrared wavelengths, which may infer presence of mechanisms such as forbidden gap transitions other can involvement of plasmonic resonances. Non-radiative recombination of excitons is one of the reasons behind absorption of SiNWs. Also, on the dielectric metal interface, the absorption mechanism can be due to plasmonic dissipation or plasmon-assisted generation of excitons in the indirect band-gap material. Comparison between nanowires with and without metallic nanoparticles has revealed the effect of nanoparticles on absorption enhancement. The broader near IR absorption, paves the way for applications like hyperthermia of cancer while the optical transition in near IR also facilitates harvesting electromagnetic energy at a broad spectrum from visible to IR.

Degradation Analysis and Degradation Suppression Technology Caused by Light Absorption at Active Layer Facet of GaInAsP Laser Diode

2008 ◽  
Vol 128 (5) ◽  
pp. 732-737
Author(s):  
Hiroyuki Ichikawa ◽  
Masashi Ito ◽  
Chie Fukuda ◽  
Kotaro Hamada ◽  
Akira Yamaguchi ◽  
...  
Keyword(s):  
Active Layer ◽  
Laser Diode ◽  
Light Absorption ◽  
Degradation Analysis
Sign in / Sign up

Export Citation Format

Share Document